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STE36N50-DK Datasheet(PDF) 3 Page - STMicroelectronics |
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STE36N50-DK Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 9 page  MOSFET ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symbol Parameter Test Condi tions Min. Typ. Max. Unit gfs ( ∗)Forward Transconductance VDS >ID(on) xRDS(on)max ID =18 A 16 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transf er Capacitance VDS =25 V f = 1 MHz VGS = 0 8000 1300 350 pF pF pF SWITCHING ON Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =250 V ID =18 A RG =4.7 Ω VGS =10 V (see test circuit, figure 1) 45 85 65 120 ns ns (di/dt) on Turn-on Current Slope VDD =400 V ID =36 A RG =4.7 Ω VGS =10 V (see test circuit, figure 3) 700 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V ID =36 A VGS =10 V 295 35 145 nC nC nC SWITCHING OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =400 V ID =36 A RG =4.7 Ω VGS =10 V (see test circuit, figure 3) 100 45 160 140 65 225 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit ISD I SDM( •) Source-drain Current Source-drain Current (pulsed) 36 144 A A VSD ( ∗) Forward On Volt age ISD =36 A VGS =0 1.4 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 36 A di/dt = 100 A/ µs VDD = 100 V Tj =150 oC (see test circuit, figure 3) 1 29 58 µs µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STE36N50-DK 3/9 |
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