1

BFR92ALT1

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

High-Frequency Transistors

Designed primarily for use in high–gain, low–noise, small–signal UHF and

microwave amplifiers constructed with thick and thin–film circuits using surface

mount components.

• T1 suffix indicates tape and reel packaging of 3,000 units per reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

15

Vdc

Collector–Base Voltage

VCBO

20

Vdc

Emitter–Base Voltage

VEBO

2.0

Vdc

Collector Current — Continuous

IC

25

mAdc

Maximum Junction Temperature

TJmax

150

°C

Power Dissipation, Tcase = 75°C

Derate linearly above Tcase = 75°C @

PD(max)

0.273

3.64

W

mW/

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Storage Temperature

Tstg

– 55 to +150

°C

Thermal Resistance Junction to Case

R

θJC

275

°C/W

DEVICE MARKING

BFR92ALT1 = P2

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (1)

(IC = 10 mA)

V(BR)CEO

15

—

Vdc

Collector–Base Breakdown Voltage

(IC = 100 µA)

V(BR)CBO

20

—

Vdc

Emitter–Base Breakdown Voltage

(IC = 100 µA)

V(BR)EBO

2.0

—

Vdc

Collector Cutoff Current

(VCB = 10 V)

ICBO

—

50

nA

ON CHARACTERISTICS

DC Current Gain

(IC = 14 mA, VCE = 10 V)

hFE

40

—

—

Collector–Emitter Saturation Voltage (1)

(IC = 25 mA, IB = 5.0 mA)

VCE(sat)

—

0.5

Vdc

Base–Emitter Saturation Voltage (1)

(IC = 25 mA, IB = 5.0 mA)

VBE(sat)

—

1.2

Vdc

NOTE:

(continued)

1. Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%.

Order this document

by BFR92ALT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BFR92ALT1

RF TRANSISTORS

NPN SILICON

CASE 318–08, STYLE 6

SOT–23

LOW PROFILE

REV 7