© Semiconductor Components Industries, LLC, 2009

May, 2009 − Rev. 1

1

Publication Order Number:

NDF10N60Z/D

NDF10N60Z, NDP10N60Z

N-Channel Power MOSFET

0.65 W, 600 Volts

Features

Applications

Rating

Symbol NDF10N60Z NDP10N60Z Unit

Drain−to−Source Voltage

600 (Note 1)

V

Continuous Drain Current

10 (Note 2)

A

Continuous Drain Current

5.7 (Note 2)

A

Pulsed Drain Current,

36 (Note 2)

A

Power Dissipation (Note 1)

36

125

W

Gate−to−Source Voltage

±30

V

Single Pulse Avalanche

Energy, L = 6.0 mH,

300

mJ

ESD (HBM)

(JESD 22−114−B)

3900

V

RMS Isolation Voltage

(t = 0.3 sec., R.H. ≤ 30%,

4500

V

Peak Diode Recovery

dv/dt

4.5 (Note 3)

V/ns

Continuous Source

Current (Body Diode)

10

A

Maximum Temperature for

Soldering Leads, 0.063″

(1.6 mm) from Case for

10 s Package Body for 10 s

300

260

°C

Operating Junction and

Storage Temperature Range

−55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu

2. Limited by maximum junction temperature

Device

Package

Shipping

ORDERING INFORMATION

NDP10N60ZG

TO−220AB

In Development

N−Channel

MARKING

DIAGRAM

A

= Location Code

Y

= Year

WW

= Work Week

G

= Pb−Free Package

http://onsemi.com

600 V

0.65 Ω

NDF10N60ZG

or

NDP10N60ZG

AYWW

Gate

Source

Drain

TO−220FP

CASE 221D

STYLE 1

NDF10N60ZG

TO−220FP

50 Units/Rail

TO−220AB

CASE 221A

STYLE 5

G (1)

D (2)

S (3)