NTD4904NT4G datasheet(3/8 Pages) ONSEMI

Part #	NTD4904NT4G

Description	Power MOSFET 30 V, 79 A, Single N?묬hannel, DPAK/IPAK

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD4904N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

0.84

1.1

V

TJ = 125°C

0.7

Reverse Recovery Time

tRR

VGS = 0 V, dIs/dt= 100 A/ms,

IS = 30 A

40.4

ns

Charge Time

ta

20.5

Discharge Time

tb

19.9

Reverse Recovery Time

QRR

35

nC

PACKAGE PARASITIC VALUES

Source Inductance (Note 5)

LS

TA = 25°C

2.48

nH

Drain Inductance, DPAK

LD

0.0164

Drain Inductance, IPAK (Note 5)

LD

1.88

Gate Inductance (Note 5)

LG

4.9

Gate Resistance

RG

1.0

2.0

W

5. Assume terminal length of 110 mils.

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