NTLUF4189NZTAG datasheet(1/8 Pages) ONSEMI

Part #	NTLUF4189NZTAG

Description	Power MOSFET and Schottky Diode 30 V, N?묬hannel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package

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Manufacturer	ONSEMI [ON Semiconductor]

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March, 2009 − Rev. 1

1

Publication Order Number:

NTLUF4189NZ/D

NTLUF4189NZ

Power MOSFET and

Schottky Diode

30 V, N−Channel with 0.5 A Schottky

Barrier Diode, 1.6 x 1.6 x 0.55 mm

mCoolt Package

Features

• Low Qg and Capacitance to Minimize Switching Losses

• Low Profile UDFN 1.6x1.6 mm for Board Space Saving

• Low VF Schottky Diode

• ESD Protected Gate

• This is a Halide−Free Device

• This is a Pb−Free Device

Applications

• DC-DC Boost Converter

• Color Display and Camera Flash Regulators

• Optimized for Power Management Applications for Portable

Products, such as Cell Phones, PMP, DSC, GPS, and others

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Units

Drain-to-Source Voltage

VDSS

30

V

Gate-to-Source Voltage

VGS

±8.0

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

1.5

A

TA = 85°C

1.1

t ≤ 5 s

TA = 25°C

1.9

Power Dissipation

(Note 1)

Steady

State

TA = 25°C

PD

0.8

W

t ≤ 5 s

TA = 25°C

1.3

Continuous Drain

Current (Note 2)

Steady

State

TA = 25°C

ID

1.2

A

TA = 85°C

0.9

Power Dissipation (Note 2)

TA = 25°C

PD

0.5

W

Pulsed Drain Current

tp = 10 ms

IDM

8.0

A

MOSFET Operating Junction and Storage

Temperature

TJ,

TSTG

-55 to

150

°C

Schottky Operating Junction & Storage

Temperature

TJ,

TSTG

-55 to

125

°C

Source Current (Body Diode) (Note 2)

IS

1.5

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Gate-to-Source ESD Rating

(HBM) per JESD22−A114F

ESD

1000

V

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface-mounted on FR4 board using the minimum recommended pad size

of 30 mm2, 2 oz. Cu.

http://onsemi.com

G

S

N−Channel MOSFET

D

K

A

Schottky Diode

30 V

250 mW @ 3.0 V

200 mW @ 4.5 V

0.5 A

RDS(on) MAX

0.5 A

0.52 V

ID MAX

V(BR)DSS

MOSFET

SCHOTTKY DIODE

VR MAX

IF MAX

VF TYP

UDFN6

CASE 517AT

mCOOLt

PIN CONNECTIONS

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

1

6

AA = Specific Device Code

M = Date Code

G = Pb−Free Package

AA MG

G

1

350 mW @ 2.5 V

MARKING

DIAGRAM

1

2

3

6

5

4

A

N/C

D

K

G

S

(Top View)

K

D

1.5 A

0.5 A

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