NTLUS3192PZTAG datasheet(1/6 Pages) ONSEMI

Part #	NTLUS3192PZTAG

Description	Power MOSFET ??0 V, ??.2 A, Cool Single P?묬hannel, ESD, 1.6x1.6x0.55 mm UDFN Package

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Manufacturer	ONSEMI [ON Semiconductor]

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May, 2009 − Rev. P3

1

Publication Order Number:

NTLUS3192PZ/D

NTLUS3192PZ

Advance Information

Power MOSFET

−20 V, −4.2 A, mCoolt Single P−Channel,

ESD, 1.6x1.6x0.55 mm UDFN Package

Features

• UDFN Package with Exposed Drain Pads for Excellent Thermal

Conduction

• Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving

• Lowest RDS(on) in 1.6x1.6 Package

• ESD Protected

• This is a Halide Free Device

• This is a Pb−Free Device

Applications

• High Side Load Switch

• PA Switch and Battery Switch

• Optimized for Power Management Applications for Portable

Products, such as Cell Phones, PMP, DSC, GPS, and others

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Units

Drain-to-Source Voltage

VDSS

−20

V

Gate-to-Source Voltage

VGS

±8.0

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

−3.4

A

TA = 85°C

−2.4

t ≤ 5 s

TA = 25°C

−4.2

Power Dissipation

(Note 1)

Steady

State

TA = 25°C

PD

1.5

W

t ≤ 5 s

TA = 25°C

2.3

Continuous Drain

Current (Note 2)

Steady

State

TA = 25°C

ID

−2.2

A

TA = 85°C

−1.6

Power Dissipation (Note 2)

TA = 25°C

PD

0.6

W

Pulsed Drain Current

tp = 10 ms

IDM

−17

A

Operating Junction and Storage

Temperature

TJ,

TSTG

-55 to

150

°C

Source Current (Body Diode) (Note 2)

IS

−1.0

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Gate-to-Source ESD Rating

(HBM) per JESD22−A114F

ESD

1000

V

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface-mounted on FR4 board using the minimum recommended pad size

of 30 mm2, 2 oz. Cu.

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

http://onsemi.com

G

S

P−Channel MOSFET

D

−20 V

115 mW @ −2.5 V

85 mW @ −4.5 V

RDS(on) MAX

−3.0 A

ID MAX

V(BR)DSS

MOSFET

UDFN6

CASE 517AU

mCOOLt

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

AA = Specific Device Code

M = Date Code

G = Pb−Free Package

AA MG

G

1

160 mW @ −1.8 V

MARKING

DIAGRAM

250 mW @ −1.5 V

(Top View)

(Note: Microdot may be in either location)

1

6

−1.5 A

−0.5 A

−0.2 A

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