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NTLUS3192PZTAG Datasheet(PDF) 1 Page - ON Semiconductor |
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NTLUS3192PZTAG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2009 May, 2009 − Rev. P3 1 Publication Order Number: NTLUS3192PZ/D NTLUS3192PZ Advance Information Power MOSFET −20 V, −4.2 A, mCoolt Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving • Lowest RDS(on) in 1.6x1.6 Package • ESD Protected • This is a Halide Free Device • This is a Pb−Free Device Applications • High Side Load Switch • PA Switch and Battery Switch • Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS −20 V Gate-to-Source Voltage VGS ±8.0 V Continuous Drain Current (Note 1) Steady State TA = 25°C ID −3.4 A TA = 85°C −2.4 t ≤ 5 s TA = 25°C −4.2 Power Dissipation (Note 1) Steady State TA = 25°C PD 1.5 W t ≤ 5 s TA = 25°C 2.3 Continuous Drain Current (Note 2) Steady State TA = 25°C ID −2.2 A TA = 85°C −1.6 Power Dissipation (Note 2) TA = 25°C PD 0.6 W Pulsed Drain Current tp = 10 ms IDM −17 A Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS −1.0 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Gate-to-Source ESD Rating (HBM) per JESD22−A114F ESD 1000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. This document contains information on a new product. Specifications and information herein are subject to change without notice. http://onsemi.com G S P−Channel MOSFET D −20 V 115 mW @ −2.5 V 85 mW @ −4.5 V RDS(on) MAX −3.0 A ID MAX V(BR)DSS MOSFET UDFN6 CASE 517AU mCOOLt See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION AA = Specific Device Code M = Date Code G = Pb−Free Package AA MG G 1 160 mW @ −1.8 V MARKING DIAGRAM 250 mW @ −1.5 V (Top View) (Note: Microdot may be in either location) 1 6 −1.5 A −0.5 A −0.2 A |
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