© 2004

OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com

INFRA-RED

Item No.: 120234

1.

This specification applies to GaAs / GaAs LED Chips

2.

Structure

2.1

Mesa structure

2.2

Electrodes

p-side (anode)

Au alloy

n-side (cathode)

Au alloy

3.

Outlines (dimensions in microns)

Wire bond contacts can also have a spider shape

4.

Electrical and optical characteristics (T=25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Forward voltage

20 mA

1,25

1,40

V

Reverse current

5 V

10

µA

20 mA

1,0

1,3

output Power *

Φ

e

50 mA

2,5

3,0

mW

Switching time

0,6

µs

Peak wavelength

λ

P

20 mA

950

nm

* On request, wafers will be delivered according to output power classes

Power measurement at OSA on gold plate

5.

Packing

Dice on adhesive film with 1) wire bond side on top

2) back contact on top

6.

Labeling

Type

Lot No.

Φ

Quantity

min

max

p-Epitaxy GaAs

p-Electrode

n-Electrode

270

n-Substrate GaAs

n-Epitaxy GaAs

365

120

365