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KF16N50P Datasheet(PDF) 2 Page - KEC(Korea Electronics) |
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KF16N50P Datasheet(HTML) 2 Page - KEC(Korea Electronics) |
2 / 7 page 2008. 10. 2 2/7 KF16N50P/F Revision No : 1 ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 500 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.5 - V/ Drain Cut-off Current IDSS VDS=500V, VGS=0V - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=8A - 0.3 0.36 Dynamic Total Gate Charge Qg VDS=400V, ID=16A VGS=10V (Note4,5) - 40.8 - nC Gate-Source Charge Qgs - 9 - Gate-Drain Charge Qgd - 17 - Turn-on Delay time td(on) VDD=250V ID=16A RG=25 (Note4,5) - 30 - ns Turn-on Rise time tr - 21 - Turn-off Delay time td(off) - 162 - Turn-off Fall time tf - 43 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 1630 - pF Output Capacitance Coss - 244 - Reverse Transfer Capacitance Crss - 22 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 16 A Pulsed Source Current ISP - - 64 Diode Forward Voltage VSD IS=16A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=16A, VGS=0V, dIs/dt=100A/ s - 370 - ns Reverse Recovery Charge Qrr - 4.8 - C Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =6.1mH, IS=16A, VDD=50V, RG=25 , Starting Tj=25 . Note 3) IS 16A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 . Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%. Note 5) Essentially independent of operating temperature. 2 PRODUCT NAME LOT NO 1 801 2 KF16N50 F 1 801 2 KF16N50 P 1 Marking |
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