Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
1N4606
|
37Kb / 1P |
SILICON EPITAXIAL PLANAR TYPE DIODE
|
KEC(Korea Electronics) |
KTX711T
|
385Kb / 4P |
SILICON EPITAXIAL PLANAR TYPE DIODE
|
Toshiba Semiconductor |
HN1D03F
|
171Kb / 4P |
Diode Silicon Epitaxial Planar Type
|
1N4608
|
37Kb / 1P |
SILICON EPITAXIAL PLANAR TYPE DIODE
|
1S2095A
|
69Kb / 2P |
SILICON EPITAXIAL PLANAR TYPE DIODE
|
JDV2S01E
|
85Kb / 3P |
Diode Silicon Epitaxial Planar Type
|
JDV2S02E
|
85Kb / 3P |
Diode Silicon Epitaxial Planar Type
|
KEC(Korea Electronics) |
KTX311T
|
56Kb / 4P |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
|
KTX412T
|
414Kb / 4P |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
|
KTX312T
|
827Kb / 4P |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
|