NESG2101M16-A datasheet(4/13 Pages) NEC

Part #	NESG2101M16-A

Description	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

Download	13 Pages

Scroll/Zoom	100%

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

Logo

4 / 13 page

100

40

50

60

70

80

90

10

20

30

01

2

3

4

5

6

IB = 50 A

μ

300 A

μ

500 A

μ

350 A

μ

400 A

μ

450 A

μ

200 A

μ

150 A

μ

100 A

μ

250 A

μ

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

1 000

100

10

1

0.1

10

100

VCE = 1 V

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000

100

10

1

0.1

10

100

VCE = 2 V

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000

100

10

1

0.1

10

100

VCE = 3 V

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000

100

10

1

0.1

10

100

VCE = 4 V

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

Remark The graphs indicate nominal characteristics.

Data Sheet PU10395EJ03V0DS

4

NESG2101M16

Similar Part No. - NESG2101M16-A

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	NESG2101M16-A	352Kb / 15P	NPN SILICON GERMANIUM RF TRANSISTOR 2009

More results

Similar Description - NESG2101M16-A

Manufacturer	Part #	Datasheet	Description
NEC	NESG2031M16	119Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
California Eastern Labs	NESG2021M16	861Kb / 11P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
NEC	NESG2021M16	120Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
Renesas Technology Corp	NESG2101M05	172Kb / 15P	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
California Eastern Labs	NESG270034	349Kb / 11P	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)
NEC	NESG4030M14	112Kb / 10P	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
Renesas Technology Corp	2SC5752	225Kb / 22P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC5750	216Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD
NEC	2SC5752	91Kb / 20P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC5753	224Kb / 22P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

More results

NESG2101M16-A Datasheet(PDF) 4 Page - NEC

NESG2101M16-A Datasheet(HTML) 4 Page - NEC

Similar Part No. - NESG2101M16-A

Similar Description - NESG2101M16-A

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL