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DS2756E+TR Datasheet(PDF) 8 Page - Maxim Integrated Products |
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DS2756E+TR Datasheet(HTML) 8 Page - Maxim Integrated Products |
8 / 27 page DS2756: High-Accuracy Battery Fuel Gauge with Programmable Suspend Mode command targeting the ACR register address. A write to the ACR results in an automatic copy of the new value to EEPROM. Figure 5. Accumulated Current Register Format MSB-Address 10h LSB-Address 11h S 2 14 2 13 2 12 2 11 2 10 2 9 2 8 2 7 2 6 2 5 2 4 2 3 2 2 2 1 2 0 MSb LSb MSb LSb Units: 6.25 Vh/RSNS ACR LSB RSNS VIS1- VIS2 20m 15m 10m 5m 6.25 Vh 312.5 Ah 416.7 Ah 625 Ah 1.250mAh ACR RANGE RSNS VIS1- VIS2 20m 15m 10m 5m ±204.8mVh ±10.24Ah ±13.65Ah ±20.48Ah ±40.96Ah OFFSET ACCUMULATION BLANKING In order to avoid the accumulation of small positive offset errors over long periods, an offset blanking filter is provided. The blanking filter is enabled by setting the OBEN bit in the Status Register. When OBEN is set, charge currents (positive Current register values) between 15.625 V and 62.5V are not accumulated in the ACR. Therefore, with RSNS = 0.020 positive currents between 0.78mA and 3.125mA are blanked from accumulation in the ACR. ACCUMULATION BIAS Systematic errors or an application preference can require the application of an arbitrary bias to the current accumulation process. The Accumulation Bias register is provided to allow a user programmed constant positive or negative polarity bias to the current accumulation process. The Accumulation Bias value can be used to estimate battery currents that do not flow through the sense resistor, estimate battery self-discharge, or correct for offset error in the Current register and ACR register. The user programmed two’s complement value in the Accumulation Bias register is added to the Current Register once per current sample. The register format supports the accumulation bias to be applied in 1.95 V increments over a ±250V range. When using a 20m sense resistor, the bias control is 100 A over a ±12.5mA range. The Accumulation Bias register is directly read and write accessible. The user value is made non-volatile with a Copy Data command targeting EEPROM block 0. The Accumulation Bias register is loaded from EEPROM memory on power up and a transition from Sleep to Active mode. 8 of 27 |
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