MAX5079 datasheet(3/18 Pages) MAXIM

Part #	MAX5079

Description	ORing MOSFET Controller with Ultra-Fast 200ns Turn-Off

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Manufacturer	MAXIM [Maxim Integrated Products]

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ORing MOSFET Controller with

Ultra-Fast 200ns Turn-Off

_______________________________________________________________________________________

3

ELECTRICAL CHARACTERISTICS (continued)

((VIN = 2.75V to 13.2V and VAUXIN = 0V) or (VIN = 1V and VAUXIN = 2.75V to 13.2V), RSTH = open, RFTH = 0, VUVLO = 1V, VOVI = 0V,

TA = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V and TA = +25°C. See the Typical Operating Circuit.) (Note 1)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

ORing MOSFET CONTROL

ORing MOSFET Turn-On Time

tON

CGATE = 10nF, CEXT = 100nF,

MOSFET gate threshold = 2V

10

25

µs

ORing MOSFET Forward Voltage

Threshold (Fast Comparator)

VDTH

(VIN - VBUS) rising, VAUXIN

≥ 2.75V

5

12.5

20

mV

RFTH = 0

-12

-24

-31

RFTH = 12k

Ω

-63

-104

-150

ORing MOSFET Reverse Voltage

Turn-Off Threshold (Fast

Comparator (VIN - VBUS))

VFTH

RFTH = 27k

Ω, VIN ≥

VAUXIN

≥

2.75V

-126

-204

-300

mV

ORing MOSFET Reverse Voltage

Blanking Time (Fast Comparator)

tFBL

VBUS = 2.8V, RFTH = 0,

VBUS - VIN = 0.3V

50

ns

Slow-Comparator Output Voltage

Threshold on STH

VO_STH

VIN

≥ 2.75V

0.95

1

1.05

V

RSTH open

-0.1

-12

-24.0

RSTH = 500k

Ω

-25

ORing MOSFET Reverse Voltage

Turn-Off Threshold (Slow

Comparator (VIN - VBUS))

VSTH

RSTH = 64k

Ω

-100

mV

(VIN - VBUS) to ISTH

Transconductance (Slow

Comparator)

GM_STH

VSTH = 0V

0.17

mS

STH floating

0.5

0.9

1.5

CSTH = 0.047µF

5

ORing MOSFET Reverse Voltage

Blanking Time (Slow

Comparator)

tSBL

CSTH = 0.22µF

14

ms

ORing MOSFET DRIVER

Gate-Charge Current

IGATE

CEXT = 100nF, VIN

≥ 2.75V

0.7

2

mA

VGATE = VIN, VIN = 5.1V, VBUS = 5V;

VOUT = 1V

0.9

2

6.8

VGATE

≥ VIN, VIN = 2.75V, VBUS = 3.5V

1.3

Gate Discharge Current (Note 3)

IGATE.DIS_MIN

VGATE

≥ VIN, VIN = 12V, VBUS = 13.2V

3.2

A

VBUS = 3.5V, CGATE = 0.1µF

600

Gate Fall Time

tFGATE

VBUS = 3.5V, CGATE = 0.01µF

200

ns

Gate Discharge Current Delay

Time (Time from VIN Falling from

3.7V to 3V to VGATE = VIN)

tDIS_GATE

VBUS = 3.5V

70

200

ns

Gate to IN Resistance

RGATE_IN

(VGATE - VIN) = 100mV; VIN

≥ 2.75V

900

Ω

Gate to IN Clamp Voltage

VGATE_IN_CLAMP IGATE = 10mA, VIN ≥ VBUS

8.5

11

V

2.7V < VIN < 13.2V

3.8

VIN = 13.2V

6.5

7

7.7

Gate-Drive Voltage (Measured

with Respect to VIN)

(VGATE - VIN)

VIN = 2.75V

4.5

5

5.5

V

VIN Switchover Threshold to

Higher GATE Voltage (Note 4)

VIN_SOTH+

7.4

8

8.5

V

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