AGR18125EU datasheet(2/6 Pages) TRIQUINT

Part #	AGR18125EU

Description	125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor

AGR18125E

Product Brief

Electrical Characteristics

Recommended operating conditions apply unless otherwise specified: TC = 30 °C.

Table 4. dc Characteristics

Table 5. RF Characteristics

* Across full DCS band, 1.805 GHz—1.880 GHz.

Parameter

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-source Breakdown Voltage (VGS = 0, ID = 200 µA)

V(BR)DSS

65

—

Vdc

Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)

IGSS

—

4

µAdc

Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V)

IDSS

—

12

µAdc

On Characteristics

Forward Transconductance (VDS = 10 V, ID = 1 A)

GFS

—

9

—

S

Gate Threshold Voltage (VDS = 10 V, ID = 400 µA)

VGS(TH)

—

4.8

Vdc

Gate Quiescent Voltage (VDS = 26 V, ID = 1200 mA)

VGS(Q)

—

3.8

—

Vdc

Drain-source On-voltage (VGS = 10 V, ID = 1 A)

VDS(ON)

—

0.08

—

Vdc

Parameter

Symbol

Min

Typ

Max

Unit

Dynamic Characteristics

Drain-to-gate Capacitance

(VDS = 26 V, VGS = 0 V, f = 1 MHz)

CRSS

—

3.0

—

pF

Drain-to-source Capacitance

(VDS = 26 V, VGS = 0 V, f = 1 MHz)

COSS

—

48

—

pF

Functional Tests* (in Agere Systems Supplied Test Fixture)

Power Gain

(VDS = 26 V, POUT = 125 W, IDQ = 1200 mA)

GL

—

13.5

—

dB

Drain Efficiency

(VDS = 26 V, POUT = 125 W, IDQ = 1200 mA)

η

—

50

—

%

EDGE Linearity Characterization

(POUT = 50 W, f = 1.840 GHz, VDS = 26 V, IDQ = 1200 mA)

Modulation spectrum @ ± 400 kHz

—

–60

—

dBc

Modulation spectrum @ ± 600 kHz

—

–72

—

dBc

Output Power

(VDS = 26 V, 1 dB gain compression, IDQ = 1200 mA)

P1dB

—

125

—

W

Input VSWR

VSWRI

—

2:1

Ruggedness

(VDS = 26 V, POUT = 30 W, IDQ = 1200 mA,

VSWR = 10:1 [all angles])

ψ

No degradation in output

power.

400

200

(in Supplied Test Fixture)

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