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AGR18125EU Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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AGR18125EU Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 6 page 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor AGR18125E Product Brief Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Table 5. RF Characteristics * Across full DCS band, 1.805 GHz—1.880 GHz. Parameter Symbol Min Typ Max Unit Off Characteristics Drain-source Breakdown Voltage (VGS = 0, ID = 200 µA) V(BR)DSS 65 — — Vdc Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS — — 4 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) IDSS — — 12 µAdc On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) GFS — 9 — S Gate Threshold Voltage (VDS = 10 V, ID = 400 µA) VGS(TH) — — 4.8 Vdc Gate Quiescent Voltage (VDS = 26 V, ID = 1200 mA) VGS(Q) — 3.8 — Vdc Drain-source On-voltage (VGS = 10 V, ID = 1 A) VDS(ON) — 0.08 — Vdc Parameter Symbol Min Typ Max Unit Dynamic Characteristics Drain-to-gate Capacitance (VDS = 26 V, VGS = 0 V, f = 1 MHz) CRSS — 3.0 — pF Drain-to-source Capacitance (VDS = 26 V, VGS = 0 V, f = 1 MHz) COSS — 48 — pF Functional Tests* (in Agere Systems Supplied Test Fixture) Power Gain (VDS = 26 V, POUT = 125 W, IDQ = 1200 mA) GL — 13.5 — dB Drain Efficiency (VDS = 26 V, POUT = 125 W, IDQ = 1200 mA) η — 50 — % EDGE Linearity Characterization (POUT = 50 W, f = 1.840 GHz, VDS = 26 V, IDQ = 1200 mA) Modulation spectrum @ ± 400 kHz — –60 — dBc Modulation spectrum @ ± 600 kHz — –72 — dBc Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 1200 mA) P1dB — 125 — W Input VSWR VSWRI — — 2:1 Ruggedness (VDS = 26 V, POUT = 30 W, IDQ = 1200 mA, VSWR = 10:1 [all angles]) ψ No degradation in output power. 400 200 (in Supplied Test Fixture) |
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