AGR19030EF datasheet(8/10 Pages) TRIQUINT

Part #	AGR19030EF

Description	30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor

AGR19030EF

Typical Performance Characteristics (continued)

Test Conditions:

VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.

Figure 8. ACPR vs. POUT

Test Conditions:

VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.

Figure 9. IM3 vs. POUT

-70

-65

-60

-55

-50

-45

-40

-35

-30

30

35

40

45

POUT (dBm)Z

IDQ = 250 mA

IDQ = 400 mA

IDQ = 450 mA

IDQ = 350 mA

IDQ = 300 mA

-55

-50

-45

-40

-35

-30

-25

-20

-15

30

35

40

45

POUT (dBm)Z

IDQ = 250 mA

IDQ = 450 mA

IDQ = 400 mA

IDQ = 350 mA

IDQ = 300 mA

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AGR19030EF Datasheet(PDF) 8 Page - TriQuint Semiconductor

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