Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

AGR19060EU Datasheet(PDF) 4 Page - TriQuint Semiconductor

Part # AGR19060EU
Description  60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

AGR19060EU Datasheet(HTML) 4 Page - TriQuint Semiconductor

  AGR19060EU Datasheet HTML 1Page - TriQuint Semiconductor AGR19060EU Datasheet HTML 2Page - TriQuint Semiconductor AGR19060EU Datasheet HTML 3Page - TriQuint Semiconductor AGR19060EU Datasheet HTML 4Page - TriQuint Semiconductor AGR19060EU Datasheet HTML 5Page - TriQuint Semiconductor AGR19060EU Datasheet HTML 6Page - TriQuint Semiconductor AGR19060EU Datasheet HTML 7Page - TriQuint Semiconductor AGR19060EU Datasheet HTML 8Page - TriQuint Semiconductor AGR19060EU Datasheet HTML 9Page - TriQuint Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 10 page
background image
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
AGR19060E
Test Circuit Illustrations for AGR19060E
A. Schematic
B. Component Layout
Parts List:
Microstrip line: Z1 0.330 in. x 0.065 in.; Z2 0.470 in. x 0.065 in.; Z3 0.175 in. x 0.065 in.; Z4 0.260 in. x 0.270 in.; Z5 0.410 in. x 0.840 in.;
Z6 0.260 in. x 0.970 in.; Z7 0.105 in. x 0.400 in.; Z8 0.330 in. x 0.560 in.; Z9 0.165 in. x 0.240 in.; Z10 0.315 in. x 0.065 in.;
Z11 0.260 in. x 0.065 in.; Z12 0.255 in. x 0.065 in.; Z13 0.440 in. x 0.030 in.; Z14 0.695 in. x 0.050 in.
ATC® B case chip capacitors: C3, C6: 8.2 pF, 100B8R2JCA500X; C4, C16: 10 pF, 100B100JCA500X; C7: 1000 pF, 100B102JCA500X.
Kemet® B case chip capacitors: C9, C11: 0.10 µF, CDR33BX104AKWS.
Johanson Giga-Trim® variable capacitors: C5, C17: 0.4 pF—2.5 pF.
Vitramon® 1206: C2, C8: 22000 pF.
Murata® 0805: C13: 0.01 µF, GRM40X7R103K100AL.
Fair-Rite® ferrite bead: FB1, #2743019447.
Sprague® tantalum, SMT, 35 V: C1, C10, C12: 22 µF; C18: 10 µF.
Fixed film chip resistors, 0.25 W, 0.08 x 0.13: R1 510 Ω; R2 560 kΩ; R3 4.7 Ω.
PCB etched circuit boards.
Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. AGR19060E Test Circuit Schematic
DUT
R3
C2
R2
R1
C1
FB1
Z13
Z1
C4
Z2
Z4
C9
C8
C6
Z14
C13
C12
C11
C10
RF INPUT
VGG
VDD
RF
C3
C5
OUTPUT
1
2
3
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
Z5
Z6
Z7
Z8
Z10
Z12
C16
Z9
C17
Z11
+
+
C7
Z3
C18
+
Gate
Gnd
Drain
C4
C1
R3
C18
C16
C8C9
C7
S2
S1
R2
FB1
C11
C17
C13
C5
R1
C2
C6
C12
C10
C3


Similar Part No. - AGR19060EU

ManufacturerPart #DatasheetDescription
logo
TriQuint Semiconductor
AGR19030EF TRIQUINT-AGR19030EF Datasheet
355Kb / 10P
   30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF TRIQUINT-AGR19045EF Datasheet
331Kb / 10P
   45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19090E TRIQUINT-AGR19090E Datasheet
395Kb / 10P
   90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19090EF TRIQUINT-AGR19090EF Datasheet
395Kb / 10P
   90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19090EU TRIQUINT-AGR19090EU Datasheet
395Kb / 10P
   90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
More results

Similar Description - AGR19060EU

ManufacturerPart #DatasheetDescription
logo
TriQuint Semiconductor
AGR19045EF TRIQUINT-AGR19045EF Datasheet
331Kb / 10P
   45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19125E TRIQUINT-AGR19125E Datasheet
395Kb / 10P
   125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19030EF TRIQUINT-AGR19030EF Datasheet
355Kb / 10P
   30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19090E TRIQUINT-AGR19090E Datasheet
395Kb / 10P
   90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19180EF TRIQUINT-AGR19180EF Datasheet
438Kb / 9P
   180 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
logo
Infineon Technologies A...
PTF180601 INFINEON-PTF180601 Datasheet
233Kb / 11P
   LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
2004-05-03
PTF191601 INFINEON-PTF191601 Datasheet
61Kb / 4P
   LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
2004-03-17
logo
NXP Semiconductors
MHW1910-1 NXP-MHW1910-1 Datasheet
147Kb / 8P
   1930-1990 MHz, 10W RF POWER LDMOS AMPLIFIER
REV 2
logo
Infineon Technologies A...
PTFA192401E INFINEON-PTFA192401E Datasheet
431Kb / 11P
   Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ??1990 MHz
Rev. 02, 2009-04-01
PTFB191501E INFINEON-PTFB191501E Datasheet
295Kb / 15P
   Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ??1990 MHz
Rev. 02, 2009-09-09
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com