AGR19125E

125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor

Introduction

The AGR19125E is a 125 W, 28 V N-channel later-

ally diffused metal oxide semiconductor (LDMOS)

RF power field effect transistor (FET) suitable for

personal communication service (PCS)

(1930 MHz—1990 MHz), time-division multiple

access (TDMA), and single-carrier or multicarrier

class AB power amplifier applications.

Figure 1. Available Packages

Features

Typical 2 carrier, N-CDMA performance for

F2 = 1961.25 MHz, IS-95 (pilot, paging, sync,

traffic channels 8—13) 1.2288 MHz channel

bandwidth (BW). Adjacent channels measured

over a 30 kHz BW at F1 – 0.885 MHz and

F2 + 0.885 MHz. Intermodulation distortion

products measured over a 1.2288 MHz BW at

F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average

(P/A) = 9.72 dB at 0.01% probability on CCDF:

— Output power: 24 W.

— Power gain: 15 dB.

— Efficiency: 24%.

— ACPR: –48 dBc.

— IMD3: –34 dBc.

— Return loss: –10 dB.

High-reliability, gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

Device can withstand a 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W contin-

uous wave (CW) output power.

Large signal impedance parameters available.

Table 1. Thermal Characteristics

Table 2. Absolute Maximum Ratings*

* Stresses in excess of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Table 3. ESD Rating*

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

AGR19125EU (unflanged) AGR19125EF (flanged)

Parameter

Sym

Value Unit

Thermal Resistance,

Junction to Case:

AGR19125EU

AGR19125EF

0.5

0.5

°C/W

°C/W

Parameter

Sym Value Unit

Drain-source Voltage

65

Vdc

Gate-source Voltage

AGR19125EU

AGR19125EF

350

350

W

W

Derate Above 25 °C:

AGR19125EU

AGR19125EF

—

—

2.0

2.0

W/°C

W/°C

Operating Junction Tempera-

ture

200

°C

AGR19125E

Minimum (V)

Class

HBM

500

1B

MM

50

A

CDM

1500

4

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