Specifications and information are subject to change without notice.

TriQuint Semiconductor, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com

Page 1 of 6 September 2008

AH314

2.3-2.9 GHz WiMAX 2W Driver Amplifier

Product Features

5x5 mm QFN SMT package

Applications

Product Description

The AH314 is a high dynamic range broadband driver

amplifier in a surface mount package.

The two-stage

amplifier has 23 dB of gain, while achieving +24 dBm of

linear output power for 2.3–2.9 GHz WiMAX/WiBro

applications.

AH314 uses a high reliability +5V InGaP/GaAs HBT

process technology.

The device incorporates proprietary

bias circuitry to compensate for variations in linearity and

current draw over temperature. The device does not require

any negative bias voltage; an internal active bias allows the

AH314 to operate directly off a commonly available +5V

supply.

The

RoHS-compliant/Lead-free

5x5mm

QFN

package

is

surface

mountable

to

allow

for

low

manufacturing costs to the end user.

The AH314 is targeted for use in a configuration for the

driver stage amplifier in 802.16 WiMAX or WiBro

basestations where high linearity and medium power is

required.

Functional Diagram

Vbias1

GND / NC

RF IN

RF IN

RF OUT

RF OUT

RF OUT

GND / NC

Vcc2

Vpd1

Specifications

(1)

Parameter

Units

Min

Typ

Max

Operational Bandwidth

GHz

2.3

2.9

Output Channel Power

dBm

+24

Power Gain

dB

23

EVM

(2)

%

2.0

2.5

Efficiency

%

6.6

Output P1dB

dBm

+33

Noise Figure

dB

6.4

PIN_VPD Current, Ipd

mA

36

Quiescent Current, Icq

(3)

mA

600

Icc @ 24dBm

mA

700

Device Voltage, Vcc

V

+5

1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, in 2.5-2.7GHz tuned application circuit

shown in page 3.

2. Using an 802.16-2004 OFDMA, 64QAM-1/2,1024-FFT, 20 symbols, 30 subchannels.

3. This corresponds to the quiescent current or operating current under small-signal conditions with

bias resistor R1=68

Ω off pin 1 and R2=150Ω off pin 16.

4. This corresponds to the quiescent current or operating current under small signal conditions into

pins 1, 2, 15 and 17. Pin 1 and 16 is used a reference voltage for the internal biasing circuitry. It is

expected that PIN_VPD1 and PIN_VPD2 will pull 36 mA of current when used with series

resistors (i.e. Total device current typically will be 636 mA).

Absolute Maximum Rating

Parameter

Rating

Storage Temperature

-55 to +125 ºC

Collector Current, Icc ( Icc1+Icc2)

1.6 A

RF Input Power into a 50

Ω Load

19 dBm

Device Voltage

+8 V

Device Power

8 W

Thermal Resistance, Rth

14.4

°C / W

Junction Temperature

150

°C

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance

(4)

Parameter

Units

Vcc=5V

Vcc=6V

Frequency

GHz

2.6

2.6

Output Channel Power

dBm

+25

+26.5

Power Gain

dB

23.1

23.1

S11 – Input R.L.

dB

-8.2

-8.6

S22 – Output R.L.

dB

-16.7

-26

Output P1dB

dBm

33

34.5

EVM

%

1.8

2.2

Efficiency

%

8.2

8.5

Noise Figure

dB

6.4

6.4

Quiescent Current

mA

600

650

Vpd, Vbias

V

+5

+6

4. Typical parameters reflect performance in a tuned application circuit at +25

° C.

Ordering Information

Part No.

Description

AH314-G

2.3-2.9 GHz WiMAX 2W Driver Amplifier

AH314-PCB

2.4-2.7 GHz Evaluation Board

Standard T/R size = 500 pieces on a 7” reel.