Specifications and information are subject to change without notice

TriQuint Semiconductor Inc

• Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com

Page 6 of 8 Aug 2009

AH420

4W High Linearity InGaP HBT Amplifier

2010-2025 MHz Application Circuit Performance Plots

TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW

Typical TD-SCDMA Performance at 25

°C

Frequency (MHz)

2010 2015

2025 Units

Power Gain

14.9

15

14.8

dB

Input Return Loss

14

13

12

dB

Output Return Loss

11

12

13

dB

Quiescent Current, Icq

800

mA

Vpd

+5

V

Vcc

+5

V

C8

C9

C10

C11

C7

C3

C4

C5

C6

C12

C15

C14

C2

R1

C1

D1

Notes:

1.

The primary RF microstrip line is 50

Ω.

2.

Components shown on the silkscreen but not on the schematic are not used.

3.

4.

5.

6.

7.

Gain vs Frequency

T=25°C

11

12

13

14

15

16

2.00

2.01

2.02

2.03

2.04

Frequency (GHz)

S21

Return Loss

T=25°C

-25

-20

-15

-10

-5

0

2.00

2.01

2.02

2.03

2.04

Frequency (GHz)

S11

S22

Efficiency vs Output Average Power vs. Frequency

T=25°C

0

5

10

15

20

20

21

22

23

24

25

26

27

28

Output Power (dBm)

2010 MHz

2015 MHz

2025 MHz

Current vs Output Average Power vs. Frequency

T=25°C

800

850

900

950

1000

20

21

22

23

24

25

26

27

28

Output Power (dBm)

2010 MHz

2015 MHz

2025 MHz

-60

-58

-56

-54

-52

-50

-48

-46

-44

-42

-40

19

20

21

22

23

24

25

Output Power (dBm)

ACLR vs. Output Average Power vs. Frequency

T=25°C

2010 MHz

2015 MHz

2025 MHz