TGF2023-20

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

3

Dec 2008 © Rev A

Table III

RF Characterization Table 1/

Bias: Vd = 32 V & 40 V, Idq = 2 A, Vg = - 3V Typical

%

57

55

Power Added Efficiency

PAE

-

0.912 ‚176.3

0.905 ‚175.4

Load Reflection Coefficient

Г

pF/mm

0.461

0.444

Parallel Capacitance

Cp 2/

Efficiency Tuned:

dBm

47.5

48

Saturated Output Power

Psat

dB

19.5

19.5

Power Gain

Gain

·mm

158.1

190.2

Parallel Resistance

Rp 2/

pF/mm

0.314

0.263

Parallel Capacitance

Cp 2/

0.843 ‚169.0

87.79

15

46

50.5

Vd = 40 V

-

0.866 ‚170.9

Load Reflection Coefficient

Г

·mm

68.58

Parallel Resistance

Rp 2/

dB

15

Power Gain

Gain

%

47

Power Added Efficiency

PAE

dBm

49.5

Saturated Output Power

Psat

Power Tuned:

UNITS

Vd = 32 V

PARAMETER

SYMBOL

1/

Values in this table are scaled from a 1.25 mm unit GaN on SiC cell at 3.5 GHz

2/

Large signal equivalent GaN on SiC output network

3/

Optimum load impedance for maximum power or maximum PAE at 3.5 GHz. The series resistance

and inductance (Rd and Ld) shown in the Figure on page 5 is excluded