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TGF2023-20 Datasheet(PDF) 3 Page - TriQuint Semiconductor |
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TGF2023-20 Datasheet(HTML) 3 Page - TriQuint Semiconductor |
3 / 7 page TGF2023-20 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com 3 Dec 2008 © Rev A Table III RF Characterization Table 1/ Bias: Vd = 32 V & 40 V, Idq = 2 A, Vg = - 3V Typical % 57 55 Power Added Efficiency PAE - 0.912 ‚176.3 0.905 ‚175.4 Load Reflection Coefficient Г L 3/ pF/mm 0.461 0.444 Parallel Capacitance Cp 2/ Efficiency Tuned: dBm 47.5 48 Saturated Output Power Psat dB 19.5 19.5 Power Gain Gain ·mm 158.1 190.2 Parallel Resistance Rp 2/ pF/mm 0.314 0.263 Parallel Capacitance Cp 2/ 0.843 ‚169.0 87.79 15 46 50.5 Vd = 40 V - 0.866 ‚170.9 Load Reflection Coefficient Г L 3/ ·mm 68.58 Parallel Resistance Rp 2/ dB 15 Power Gain Gain % 47 Power Added Efficiency PAE dBm 49.5 Saturated Output Power Psat Power Tuned: UNITS Vd = 32 V PARAMETER SYMBOL 1/ Values in this table are scaled from a 1.25 mm unit GaN on SiC cell at 3.5 GHz 2/ Large signal equivalent GaN on SiC output network 3/ Optimum load impedance for maximum power or maximum PAE at 3.5 GHz. The series resistance and inductance (Rd and Ld) shown in the Figure on page 5 is excluded |
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