Production Process

TQBiHEMT

Combined 0.7μm E/D pHEMT & 2μm HBT Foundry Service

Semiconductors for Communications

www.triquint.com

TriQuint Semiconductor

2300 NE Brookwood Pkwy

Hillsboro, Oregon 97124

Phone: 503-615-9000

Fax: 503-615-8905

Email: foundryinfo@triquint.com

Page 2 of 5; Rev 2.0 7/22/03

Transistor Details @ Vds = 3.0V

Element

Parameter

Typical*

Units

D-Mode pHEMT

Vp (1uA/um)

-0.8

V

Idss

160

mA/mm

Imax

430

mA/mm

Breakdown, Vdg

10 min, 18 typ

V

Ft @ 50% Idss

21

GHz

Fmax @ 50% Idss

38

GHz

Gm (50% Idss)

225

mS/mm

Ron

2.3

Ohms * mm

E-Mode pHEMT

Vth (1uA/um)

+0.30

V

Idss (max)

0.01

uA/um

Imax

175

mA/mm

Breakdown, Vdg

10 min, 18 typ

V

Ft @ 50% Idss

20

GHz

Fmax @ 50% Idss

39

GHz

Gm (50% Imax)

355

mS/mm

Ron

3.0

Ohms * mm

BVcbo

24

v

Common Process Element Details

Gate Length

0.7

μm

Interconnect

3

Metal Layers

MIM Caps

Value

1200

pF/mm2

Resistors

NiCr

50

Ohms/sq

Bulk

360

Ohms/sq

HBT

Beta

75

Ft

30

GHz

Fmax

60

GHz

(For a 3x3x45μm

unit cell:)

BVceo

14

V

BVbeo

7

V

TQBiHEMT

Process

Details

Page 2 of 3; Rev 0.3; 6/05/2008

Limited Release- Proprietary

*Values for reference only: Actual specifications subject to

change without notice prior to Production Release.