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F25L004A-50PG Datasheet(PDF) 1 Page - Elite Semiconductor Memory Technology Inc. |
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F25L004A-50PG Datasheet(HTML) 1 Page - Elite Semiconductor Memory Technology Inc. |
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1 / 30 page  ESMT F25L004A Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 1.6 1/30 Flash 3V Only 4 Mbit Serial Flash Memory FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz Low power consumption - Active current : 40mA - Standby current : 75μA Reliability - 100,000 typical program/erase cycles - 20 years Data Retention Program - Byte program time 7 μ s(typical) Erase - Chip erase time 4s(typical) - Block erase time 1sec (typical) - Sector erase time 90ms(typical) Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over Byte-Program operations SPI Serial Interface - SPI Compatible : Mode 0 and Mode3 End of program or erase detection Write Protect ( WP ) Hold Pin ( HOLD ) All Pb-free products are RoHS-Compliant ORDERING INFORMATION Part No. Speed Package COMMENTS F25L004A -50PG 50MHz 8 lead SOIC 150 mil Pb-free F25L004A -100PG 100MHz 8 lead SOIC 150 mil Pb-free F25L004A -50PAG 50MHz 8 lead SOIC 200 mil Pb-free Part No. Speed Package COMMENTS F25L004A –100PAG 100MHz 8 lead SOIC 200 mil Pb-free F25L004A –50DG 50MHz 8 lead PDIP 300 mil Pb-free F25L004A –100DG 100MHz 8 lead PDIP 300 mil Pb-free GENERAL DESCRIPTION The F25L004A is a 4 Megabit 3V only CMOS Serial Flash memory device. ESMT’s memory devices reliably store memory data even after 100,000 program and erase cycles. The F25L004A features a sector erase architecture. The device memory array is divided into 128 uniform sectors with 4K byte each ; 8 uniform blocks with 64K byte each. Sectors can be erased individually without affecting the data in other sectors. Blocks can be erased individually without affecting the data in other blocks. Whole chip erase capabilities provide the flexibility to revise the data in the device. The sector protect/unprotect feature disables both program and erase operations in any combination of the sectors of the memory. |
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