Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

F25L004A-100DG Datasheet(PDF) 7 Page - Elite Semiconductor Memory Technology Inc.

Part # F25L004A-100DG
Description  3V Only 4 Mbit Serial Flash Memory
Download  30 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

F25L004A-100DG Datasheet(HTML) 7 Page - Elite Semiconductor Memory Technology Inc.

Back Button F25L004A-100DG Datasheet HTML 3Page - Elite Semiconductor Memory Technology Inc. F25L004A-100DG Datasheet HTML 4Page - Elite Semiconductor Memory Technology Inc. F25L004A-100DG Datasheet HTML 5Page - Elite Semiconductor Memory Technology Inc. F25L004A-100DG Datasheet HTML 6Page - Elite Semiconductor Memory Technology Inc. F25L004A-100DG Datasheet HTML 7Page - Elite Semiconductor Memory Technology Inc. F25L004A-100DG Datasheet HTML 8Page - Elite Semiconductor Memory Technology Inc. F25L004A-100DG Datasheet HTML 9Page - Elite Semiconductor Memory Technology Inc. F25L004A-100DG Datasheet HTML 10Page - Elite Semiconductor Memory Technology Inc. F25L004A-100DG Datasheet HTML 11Page - Elite Semiconductor Memory Technology Inc. Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 30 page
background image
ESMT
F25L004A
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.6
7/30
Instructions
Instructions are used to Read, Write (Erase and Program), and
configure the F25L004A. The instruction bus cycles are 8 bits
each for commands (Op Code), data, and addresses. Prior to
executing any Byte-Program, Auto Address Increment (AAI)
programming,
Sector-Erase,
Block-Erase,
or
Chip-Erase
instructions, the Write-Enable (WREN) instruction must be
executed first. The complete list of the instructions is provided in
Table 5. All instructions are synchronized off a high to low
transition of CE . Inputs will be accepted on the rising edge of
SCK starting with the most significant bit. CE must be driven
low before an instruction is entered and must be driven high after
the last bit of the instruction has been shifted in (except for Read,
Read-ID and Read-Status-Register instructions). Any low to high
transition on CE , before receiving the last bit of an instruction
bus cycle, will terminate the instruction in progress and return the
device to the standby mode.
Instruction commands (Op Code), addresses, and data are all
input from the most significant bit (MSB) first
TABLE 5: DEVICE OPERATION INSTRUCTIONS
Bus Cycle
1
2
3
4
5
6
Cycle Type/
Operation
1,2
Max
Freq
SIN
SOUT
SIN
SOUT
SIN
SOUT
SIN
SOUT SIN
SOUT SIN SOUT
Read
33 MHz 03H
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z
X
DOUT
High-Speed-Read
0BH Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z
X
X
X DOUT
Sector-Erase
4,5 (4K Byte)
20H
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z
-
-
-
-
Block-Erase
5 (64K Byte)
D8H Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z
-
-
-
-
Chip-Erase
5
60H
C7H
Hi-Z
-
-
-
-
-
-
-
-
-
-
Byte-Program
5
02H
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z DIN Hi-Z
-
-
Auto-Address-Increment-word
programming (AAI)
6
ADH Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z DIN0 Hi-Z DIN1 Hi-Z
Read-Status-Register
(RDSR)
05H
Hi-Z
X
DOUT
-
Note
7
-
Note
7
-
Note
7
-
-
Enable-Write-Status-Register
(EWSR)
8
50H
Hi-Z
-
-
-
-
-
-
-
-
-
-
Write-Status-Register
(WRSR)
8
01H
Hi-Z
Data
Hi-Z
-
-
-.
-
-
-
-
-
Write-Enable (WREN)
11
06H
Hi-Z
-
-
-
-
-
-
-
-
-
-
Write-Disable (WRDI)
04H
Hi-Z
-
-
-
-
-
-
-
-
-
-
Read-Electronic-Signature
9
(RES)
ABH Hi-Z
X
12H
-
-
-
-
-
-
-
-
Jedec-Read-ID (JEDEC-ID)
10
9FH Hi-Z
X
8CH
X
20H
X
13H
-
-
-
-
90H
(A0=0)
8CH
12H
Read-ID (RDID)
90H
(A0=1)
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z
X
12H
X
8CH
Enable SO to output RY/BY#
Status during AAI (EBSY)
70H
Hi-Z
-
-
-
-
-
-
-
-
Disable SO to output RY/BY#
Status during AAI (DBSY)
50MHz
100MHz
80H
Hi-Z
-
-
-
-
-
-
-
-
1.
Operation: SIN = Serial In, SOUT = Serial Out
2.
X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary)
3.
One bus cycle is eight clock periods.
4.
Sector addresses: use AMS-A12, remaining addresses can be VIL or VIH
5.
Prior to any Byte-Program, Sector-Erase, Block-Erase,or Chip-Erase operation, the Write-Enable (WREN) instruction must be
executed.
6.
To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by the data to be
programmed.
7.
The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE .
8.
The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction
of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both
instructions effective.
9.
The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE .


Similar Part No. - F25L004A-100DG

ManufacturerPart #DatasheetDescription
logo
Elite Semiconductor Mem...
F25L004A-100DG ESMT-F25L004A-100DG Datasheet
379Kb / 32P
   4Mbit (512Kx8) 3V Only Serial Flash Memory
More results

Similar Description - F25L004A-100DG

ManufacturerPart #DatasheetDescription
logo
Elite Semiconductor Mem...
F25L04UA ESMT-F25L04UA Datasheet
276Kb / 25P
   3V Only 4 Mbit Serial Flash Memory
F25L32PA ESMT-F25L32PA Datasheet
378Kb / 36P
   3V Only 32 Mbit Serial Flash Memory with Dual
F25L16PA ESMT-F25L16PA Datasheet
475Kb / 33P
   3V Only 16 Mbit Serial Flash Memory with Dual
F25L08PA ESMT-F25L08PA Datasheet
493Kb / 32P
   3V Only 8 Mbit Serial Flash Memory with Dual
F25L08PA ESMT-F25L08PA_1 Datasheet
494Kb / 32P
   3V Only 8 Mbit Serial Flash Memory with Dual
F25S004A ESMT-F25S004A Datasheet
489Kb / 33P
   2.5V Only 4 Mbit Serial Flash Memory
F25L004A ESMT-F25L004A_1 Datasheet
565Kb / 33P
   3V Only 4 Mbit Serial Flash Memory Operation Temperature Condition -40째C ~85째C
F25L32QA ESMT-F25L32QA Datasheet
489Kb / 42P
   3V Only 32 Mbit Serial Flash Memory with Dual and Quad
F25L008A ESMT-F25L008A_08 Datasheet
373Kb / 32P
   8Mbit (1Mx8) 3V Only Serial Flash Memory
F25L016A ESMT-F25L016A_1 Datasheet
379Kb / 32P
   16Mbit (2Mx8) 3V Only Serial Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com