BA-3E12UW datasheet(2/3 Pages) BRIGHT

Part #	BA-3E12UW

Description	hi-eff red chips, which are made from GaAsP on GaP substrate

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Manufacturer	BRIGHT [BRIGHT LED ELECTRONICS CORP]

Direct Link	http://www.brightled.co.kr

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2 / 3 page

B

BR

RIIG

GH

HT

T L

LE

ED

D E

EL

LE

EC

CT

TR

RO

ON

NIIC

CS

S C

CO

OR

RP

P..

B

BA

A--3

3E

E1

12

2U

UW

W

Ver.1.0 Page 2 of 3

SINCE 1981

●

Absolute Maximum Ratings(Ta=25℃)

Parameter

Symbol

Rating

Unit

Power Dissipation Per Segment

Pd

80

mW

Forward Current Per Segment

IF

30

mA

Peak Forward Current Per Segment

IFP

(Duty 1/10, 1KHZ)

150

mA

Reverse Voltage Per Segment

VR

5

V

Operating Temperature

Topr

-40℃~80℃

-

Storage Temperature

Tstg

-40℃~85℃

-

Soldering Temperature

(1/16" From Body)

Tsol

260℃ For 5 Seconds

-

●

Electrical And Optical Characteristics(Ta=25℃)

Parameter

Symbol Condition

Min.

Typ.

Max.

Unit

Forward Voltage Per Segment

Vf

IF=10mA

-

1.9

2.5

V

Luminous Intensity Per Segment

Iv

IF=10mA

-

9.0

-

mcd

Reverse Current Per Segment

IR

VR=5V

-

100

µA

Peak Wave Length

λ

p

IF=10mA

-

640

-

nm

Dominant Wave Length

λ

d

IF=10mA

626

-

636

nm

Spectral Line Half-width

∆λ

IF=10mA

-

40

-

nm

佰鴻工業股份有限公司

http://www.brtled.com

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BA-3E12UW Datasheet(PDF) 2 Page - BRIGHT LED ELECTRONICS CORP

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