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F49L160UA Datasheet(PDF) 8 Page - Elite Semiconductor Memory Technology Inc. |
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F49L160UA Datasheet(HTML) 8 Page - Elite Semiconductor Memory Technology Inc. |
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8 / 51 page  ESMT F49L160UA/F49L160BA Operation Temperature condition -40 °C~85°C Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008 Revision: 1.4 8/51 Reset Mode : Hardware Reset When the ESET R pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tri-states all output pins, and ignores all read/write commands for the duration of the ESET R pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated later once the device is ready to accept another command sequence, to ensure the data integrity. The current is reduced for the duration of the ESET R pulse. When ESET R is held at VSS±0.3V, the device draws CMOS standby current (ICC4). If ESET R is held at VIL but not within VSS±0.3V, the standby current will be greater. The ESET R pin may be tied to system reset circuitry. A system reset would thus reset the Flash memory, enabling the system to read the boot-up firm-ware from the Flash memory. If ESET R is asserted during a program or erase embedded algorithm operation, the RY/BY pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/ BY to determine whether the reset operation is complete. If ESET R is asserted when a program or erase operation is not executing , i.e. the RY/BY is “1”, the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data after tRH when the ESET R pin returns to VIH. Refer to the AC Characteristics tables 17 for Hardware Reset section & Figure 23 for the timing diagram. Read Mode To read array data from the outputs, the system must drive the CE and OE pins to VIL. CE is the power control and selects the device. OE is the output control and gates array data to the output pins. WE should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor’s read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See “Read Command” section for more information. Refer to the AC Read Operations table 14 for timing specifications and to Figure 5 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Write Mode To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE and CE to VIL, and OE to VIH. The “Program Command” section has details on programming data to the device using standard command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Tables 1 and 2 indicate the address space that each sector occupies. A “sector address” consists of the address bits required to uniquely select a sector. The “Software Command Definitions” section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. When the system writes the auto-select command sequence, the device enters the auto-select mode. The system can then read auto-select codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Auto-select Mode and Auto-select Command sections for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The “AC Characteristics” section contains timing specification tables and timing diagrams for write operations. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain unchanged for over 250ns. The automatic sleep mode is independent of the CE , WE , and OE control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC4 in the DC Characteristics table represents the automatic sleep mode current specification. Word / Byte Mode This pin control the I/O configuration of device. When BYTE = VIH or Vcc ± 0.3V. The I/O configuration is x16 and the pin of D15/A-1 is bi-direction Data I/O. However, BYTE = VIL or VSS ± 0.3V. The I/O configuration would be x8 and The pin of DQ15/A-1 only address input pin. You must define the function of this pin before enable this device. |
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Similar Description - F49L160UA_1 |
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