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M12L64164A-7TA Datasheet(PDF) 9 Page - Elite Semiconductor Memory Technology Inc.

Part # M12L64164A-7TA
Description  1M x 16 Bit x 4 Banks Synchronous DRAM
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M12L64164A-7TA Datasheet(HTML) 9 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M12L64164A
Operation temperature condition -25℃ ~ 85℃
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2004
Revision: 0.1
9/44
makes Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2)
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Address
A13~A12
A11~A10/AP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
RFU
RFU
RFU
TM
CAS Latency
BT
Burst Length
Test Mode
CAS Latency
Burst Type
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT = 0
BT = 1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
Reserved
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
0
1
0
4
4
1
1
Reserved
0
1
1
3
0
1
1
8
8
1
0
0
Reserved
1
0
0
Reserved Reserved
1
0
1
Reserved
1
0
1
Reserved Reserved
1
1
0
Reserved
1
1
0
Reserved Reserved
1
1
1
Reserved
1
1
1
Full Page Reserved
Full Page Length : 256
POWER UP SEQUENCE
1.Apply power and start clock, Attempt to maintain CKE = ”H”, DQM = ”H” and the other pin are NOP condition at the inputs.
2. Maintain stable power , stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue mode register set command to initialize the mode register.
cf.) Sequence of 4 & 5 is regardless of the order.
The device is now ready for normal operation.
Note :
1. RFU(Reserved for future use) should stay “0” during MRS cycle.


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