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M12L64164A-7TIG Datasheet(PDF) 7 Page - Elite Semiconductor Memory Technology Inc.

Part # M12L64164A-7TIG
Description  1M x 16 Bit x 4 Banks Synchronous DRAM
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M12L64164A-7TIG Datasheet(HTML) 7 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M12L64164A
Operation Temperature Condition -40°C~85°C
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2007
Revision: 1.2
7/45
AC CHARACTERISTICS (AC operating condition unless otherwise noted)
-5
-6
-7
PARAMATER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
NOTE
CAS latency = 3
5
6
7
CLK cycle time
CAS latency = 2
tCC
10
1000
10
1000
10
1000
ns
1
CAS latency = 3
4.5
5.5
6
CLK to valid
output delay
CAS latency = 2
tSAC
6
6
6
ns
1,2
CAS latency = 3
2.0
2.5
2.5
Output data
hold time
CAS latency = 2
tOH
2.0
2.5
2.5
ns
2
CLK high pulsh width
tCH
2.5
2.5
2.5
ns
3
CLK low pulsh width
tCL
2.5
2.5
2.5
ns
3
Input setup time
tSS
1.5
1.5
1.5
ns
3
Input hold time
tSH
1
1
1
ns
3
CLK to output in Low-Z
tSLZ
0
0
0
ns
2
CAS latency = 3
4.5
5.5
6
CLK to output
in Hi-Z
CAS latency = 2
tSHZ
6
6
6
ns
-
Note :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered.
3. Assumed input rise and fall time (tr & tf) =1ns.
If tr & tf is longer than 1ns. transient time compensation should be considered.
i.e., [(tr + tf)/2 – 1] ns should be added to the parameter.


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