Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

M12L2561616A-7BG Datasheet(PDF) 6 Page - Elite Semiconductor Memory Technology Inc.

Part # M12L2561616A-7BG
Description  4M x 16 Bit x 4 Banks Synchronous DRAM
Download  45 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M12L2561616A-7BG Datasheet(HTML) 6 Page - Elite Semiconductor Memory Technology Inc.

Back Button M12L2561616A-7BG Datasheet HTML 2Page - Elite Semiconductor Memory Technology Inc. M12L2561616A-7BG Datasheet HTML 3Page - Elite Semiconductor Memory Technology Inc. M12L2561616A-7BG Datasheet HTML 4Page - Elite Semiconductor Memory Technology Inc. M12L2561616A-7BG Datasheet HTML 5Page - Elite Semiconductor Memory Technology Inc. M12L2561616A-7BG Datasheet HTML 6Page - Elite Semiconductor Memory Technology Inc. M12L2561616A-7BG Datasheet HTML 7Page - Elite Semiconductor Memory Technology Inc. M12L2561616A-7BG Datasheet HTML 8Page - Elite Semiconductor Memory Technology Inc. M12L2561616A-7BG Datasheet HTML 9Page - Elite Semiconductor Memory Technology Inc. M12L2561616A-7BG Datasheet HTML 10Page - Elite Semiconductor Memory Technology Inc. Next Button
Zoom Inzoom in Zoom Outzoom out
 6 / 45 page
background image
ESMT
M12L2561616A
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2008
Revision: 1.4
6/45
Version
Parameter
Symbol
-6
-7
Unit
Note
Col. address to col. address delay
tCCD(min)
1
tCK
3
CAS latency = 3
2
Number of valid
Output data
CAS latency = 2
1
ea
4
Note : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then
rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. A new command may be given tRFC after self refresh exit.
6. A maximum of eight consecutive AUTO REFRESH commands (with tRFCmin) can be posted to any given SDRAM, and the
maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is
8x7.8 μ s.)
AC CHARACTERISTICS
(AC operating condition unless otherwise noted)
-6
-7
Parameter
Symbol
MIN
MAX
MIN
MAX
Unit
Note
CAS latency = 3
6
7
CLK cycle time
CAS latency = 2
tCC
10
1000
10
1000
ns
1
CAS latency = 3
-
5.4
-
5.4
CLK to valid
output delay
CAS latency = 2
tSAC
-
5.4
-
5.4
ns
1,2
CAS latency = 3
2.5
-
3
-
Output data
hold time
CAS latency = 2
tOH
-
-
3
-
ns
2
CLK high pulsh width
tCH
2.5
-
2.5
-
ns
3
CLK low pulsh width
tCL
2.5
-
2.5
-
ns
3
Input setup time
tSS
1.5
-
1.5
-
ns
3
Input hold time
tSH
1
-
1
-
ns
3
CLK to output in Low-Z
tSLZ
1
-
1
-
ns
2
CAS latency = 3
-
5.4
-
5.4
CLK to output
in Hi-Z
CAS latency = 2
tSHZ
-
6
-
6
ns
-
Note :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered.
3. Assumed input rise and fall time (tr & tf) =1ns.
If tr & tf is longer than 1ns. transient time compensation should be considered.
i.e., [(tr + tf)/2 – 1] ns should be added to the parameter.


Similar Part No. - M12L2561616A-7BG

ManufacturerPart #DatasheetDescription
logo
Elite Semiconductor Mem...
M12L2561616A-7BG ESMT-M12L2561616A-7BG Datasheet
890Kb / 44P
   4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7BG2K ESMT-M12L2561616A-7BG2K Datasheet
933Kb / 45P
   JEDEC standard 3.3V power supply
More results

Similar Description - M12L2561616A-7BG

ManufacturerPart #DatasheetDescription
logo
A-Data Technology
ADS8616A8A A-DATA-ADS8616A8A Datasheet
550Kb / 8P
   Synchronous DRAM(4M X 16 Bit X 4 Banks)
Rev 1.0 December, 2001
logo
Elite Semiconductor Mem...
M12L2561616A ESMT-M12L2561616A_08 Datasheet
926Kb / 45P
   4M x 16 Bit x 4 Banks Synchronous DRAM
logo
AMIC Technology
A43L4616A AMICC-A43L4616A Datasheet
498Kb / 43P
   4M X 16 Bit X 4 Banks Synchronous DRAM
A43L4616 AMICC-A43L4616 Datasheet
1Mb / 10P
   4M X 16 Bit X 4 Banks Synchronous DRAM
logo
A-Data Technology
VDS8616A8A A-DATA-VDS8616A8A Datasheet
538Kb / 8P
   Synchronous DRAM(4M X 16 Bit X 4 Banks)
Rev 1.0 December, 2001
logo
Elite Semiconductor Mem...
M12L2561616A ESMT-M12L2561616A Datasheet
890Kb / 44P
   4M x 16 Bit x 4 Banks Synchronous DRAM
logo
White Electronic Design...
WED416S16030A WEDC-WED416S16030A Datasheet
900Kb / 26P
   4M x 16 Bits x 4 Banks Synchronous DRAM
logo
A-Data Technology
ADS7608A4A A-DATA-ADS7608A4A Datasheet
696Kb / 8P
   Synchronous DRAM(4M X 8 Bit X 4 Banks)
Rev 1 April, 2001
VDS7608A4A A-DATA-VDS7608A4A Datasheet
696Kb / 8P
   Synchronous DRAM(4M X 8 Bit X 4 Banks)
Rev 1 April, 2001
logo
Hynix Semiconductor
HY57V561620B HYNIX-HY57V561620B Datasheet
165Kb / 12P
   4 Banks x 4M x 16Bit Synchronous DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com