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M12S16161A-7BIG Datasheet(PDF) 6 Page - Elite Semiconductor Memory Technology Inc.

Part # M12S16161A-7BIG
Description  512K x 16Bit x 2Banks Synchronous DRAM
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M12S16161A-7BIG Datasheet(HTML) 6 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M12S16161A
Operation Temperature Condition -40°C~85°C
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2007
Revision : 1.0
6/30
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Note
Note
CAS Latency =3
6
7
1000
CLK cycle time
CAS Latency =2
tCC
8
1000
8.6
ns
1
CAS Latency =3
-
5.5
-
6
CLK to valid
output delay
CAS Latency =2
tSAC
-
6
-
6
ns
1
Output data hold time
tOH
2
2
ns
2
CLK high pulse width
tCH
2
2.5
ns
3
CLK low pulse width
tCL
2
2.5
ns
3
Input setup time
tSS
2
2
ns
3
Input hold time
tSH
1
1
ns
3
CLK to output in Low-Z
tSLZ
1
1
ns
2
CAS Latency =3
-
5.5
-
6
CLK to output in
Hi-Z
CAS latency =2
tSHZ
-
6
-
6
ns
*All AC parameters are measured from half to half.
Note: 1.Parameters depend on programmed CAS latency.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.


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