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AS5C4008EC-15 Datasheet(PDF) 5 Page - Austin Semiconductor |
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AS5C4008EC-15 Datasheet(HTML) 5 Page - Austin Semiconductor |
5 / 17 page SRAM SRAM SRAM SRAM SRAM AS5C4008 AS5C4008 Rev. 6.2 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 Austin Semiconductor, Inc. NOTES 1. All voltages referenced to V SS (GND). 2. -2V for pulse width < 20ns 3. I CC is dependent on output loading and cycle rates. 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV from steady state voltage. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. Chip enable and write enable can initiate and terminate a WRITE cycle. 13. Output enable (OE\) is inactive (HIGH). 14. Output enable (OE\) is active (LOW). 15. ASI does not warrant functionality nor reliability of any product in which the junction temperature exceeds 150°C. Care should be taken to limit power to acceptable levels. Fig. 1 Output Load Equivalent Fig. 2 Output Load Equivalent 167 ohms 167 ohms 1.73V 1.73V C=5pF C=30pF Q Q DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) AC TEST CONDITIONS Input pulse levels ................................................... Vss to 3.0V Input rise and fall times ....................................................... 3ns Input timing reference levels ............................................ 1.5V Output reference levels ..................................................... 1.5V Output load ............................................... See Figures 1 and 2 DESCRIPTION SYMBOL MIN MAX UNITS NOTES VCC for Retention Data VDR 2V Data Retention Current (L Version Only) VCC = 2V ICCDR 4.5 mA Chip Deselect to Data Retention Time tCDR 0ns 4 Operation Recovery Time tR 10 ms 4, 11 CE\ > (Vcc -0.2V) VIN > (Vcc -0.2V) or < 0.2V CONDITIONS |
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