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AS5SP128K32DQ-6ET Datasheet(PDF) 4 Page - Austin Semiconductor |
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AS5SP128K32DQ-6ET Datasheet(HTML) 4 Page - Austin Semiconductor |
4 / 10 page AS5SP128K32DQ Austin Semiconductor, Inc. reserves the right to change products or modify product specifications with appropriate notification Revision 1.1 07/29/04 For Additional Products and Information visit out Web site at www.austinsemiconductor.com 4 COTS PEM AS5SP128K32DQ Austin Semiconductor, Inc. SSRAM Linear Burst Burst Control State Case 1 Case 2 Case 3 Case 4 Pin [MODE] LOW A1 A0 A1 A0 A1 A0 A1 A0 First Address 00011 011 01101 100 10110 001 Fourth Address 11000 110 Synchronous Truth Tables Burst Sequence Tables Write Table Absolute Maximum Ratings* *Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum conditions for any duration or segment of time may affect device reliability. Capacitance Asynchronous Truth Table AC Test Loads CE1\ CE2 CE3\ ADSP\ ADSC\ ADV WT / RD CLK Address Accessed Operation H X X X L X X NA Not Selected L L X L X X X NA Not Selected L X H L X X X NA Not Selected L L X X L X X NA Not Selected LX H X LX X NA Not Selected L H L L X X X External Address Begin Burst, READ L H L H L X WT External Address Begin Burst, WRITE L H L H L X RD External Address Begin Burst, READ X X X H H L RD Next Address Continue Burst, READ H X X X H L RD Next Address Continue Burst, READ X X X H H L WT Next Address Continue Burst, WRITE H X X X H L WT Next Address Continue Burst, WRITE X X X H H H RD Current Address Suspend Burst, READ H X X X H H RD Current Address Suspend Burst, READ X X X H H H WT Current Address Suspend Burst, WRITE H X X X H H WT Current Address Suspend Burst, WRITE Notes: 1. X = Don’t Care 2. WT= WRITE operation in WRITE TABLE, RD= READ operation in WRITE TABLE GW\ BW\ BWa\ BWb\ BWc\ BWd\ Operation H H XXXX READ H L H HHH READ H L L H H H WRITE Byte [A] H L H L H H WRITE Byte [B] H L H H L L WRITE Byte [C], [D] H LLLL L WRITE ALL Bytes L XXXXX WRITE ALL Bytes Parameter Symbol Min. Max. Units Voltage on VDD Pin VDD -0.3 4.6 V Voltage on VDDQ Pins VDDQ VDD V Voltage on Input Pins VIN -0.3 VDD+0.3 V Voltage on I/O Pins VIO -0.3 VDDQ+0.3 V Power Dissipation PD 1.6 W Storage Temperature tSTG -65 150 οC Operating Temperatures /CT 070 οC [Screening Levels] /IT -40 85 οC /ET -40 105 οC /XT -55 125 οC Parameter Symbol Max. Units Input Capacitance CI 5.0 pF Input/Output Capacitance CIO 5.0 pF Clock Input Capacitance CCLK 5.0 pF R= 1538 ohm@2.5v R= 351 ohm@3.3v 3.3/2.5v Output Diagram [B] 5 pF R= 317 ohm@3.3v R= 1667 ohm@2.5v Output Zo=50 ohm 30 pF Rt = 50 ohm Vt= Termination Voltage Rt= Termination Resistor Vt= 1.50v for 3.3v VDDQ Vt= 1.25v for 2.5v VDDQ Diagram [A] Operation ZZ OE\ I/O Status Power-Down (SLEEP) H X High-Z READ L L DQ L H High-Z WRITE L X Din, High-Z De-Selected L X High-Z Interleaved Burst Burst Control State Case 1 Case 2 Case 3 Case 4 Pin [MODE] HIGH A1 A0 A1 A0 A1 A0 A1 A0 First Address 0 0 0110 11 01 0011 10 10 1100 01 Fourth Address 1 1 1001 00 |
Similar Part No. - AS5SP128K32DQ-6ET |
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Similar Description - AS5SP128K32DQ-6ET |
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