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AS8F1M32 Datasheet(PDF) 4 Page - Austin Semiconductor |
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AS8F1M32 Datasheet(HTML) 4 Page - Austin Semiconductor |
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4 / 10 page  AUSTIN SEMICONDUCTOR, INC. FLASH FLASH FLASH FLASH FLASH AS8F1M32 AS8F1M32 Rev. 1.5 09/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (V CC = 5.0V, -55°C < T A < +125°C) MIN MAX MIN MAX MIN MAX Write Cycle Time tAVAV tWC 90 120 150 ns Chip Select Setup Time tELWL tCS 00 0 ns Write Enable Pulse Width tWLWH tWP 45 50 50 ns Address Setup Time tAVWL tAS 00 0 ns Data Setup Time tDVWH tDS 45 50 50 ns Data Hold Time tWHDX tDH 00 0 ns Address Hold Time tWLAX tAH 45 50 50 ns Write Enable Pulse Width High tWHWL tWPH 20 20 20 ns Duration of Byte Progreamming Operation 1 t WHWH1 300 300 300 µs Sector Erase 2 tWHWH2 8 8 8 sec Read Recovery Time before Write tGHWL 00 0 µs VCC Setup Time tVCS 50 50 50 µs Chip Programming Time 3 44 44 44 sec Chip Erase Time 4 256 256 256 sec Output Enable Hold Time 5 tOEH 10 10 10 ns RESET\ Pulse Width tRP 500 500 500 ns Read Cycle Time tAVAV tRC 90 120 150 ns Address Access Time tAVQV tACC 90 120 150 ns Chip Select Access Time tELQV tCE 90 120 150 ns Output Enable to Output Valid tGLQV tOE 40 50 55 ns Chip Select High to Output High 6 tEHQZ tDF 20 30 35 ns Output Enable High to Output High 6 tGHQZ tDF 20 30 35 ns Output Hold from Adresses, CS\ or OE\ Change, whichever is First tAXQX tOH 00 0 ns RST Low to Read Mode 6 tReady 20 20 20 µs Write Cycle Time tAVAV tWC 90 120 150 ns Write Enable Setup Time tWLEL tWS 00 0 ns Chip Select Pulse Width tELEH tCP 45 50 50 ns Address Setup Time tAVEL tAS 00 0 ns Data Setup Time tDVEH tDS 45 50 50 ns Data Hold Time tEHDX tDH 00 0 ns Address Hold Time tELAX tAH 45 50 50 ns Chip Select Pulse Width High tEHEL tCPH 20 20 20 ns Duration of Byte Progreamming Operation 1 t WHWH1 300 300 300 µs Sector Erase Time 2 tWHWH2 8 8 8 sec Read Recovery Time tGHEL 00 0 µs Chip Programming Time 44 44 44 sec Chip Erase Time 4 256 256 256 sec Output Enable Hold Time 5 tOEH 10 10 10 ns CS\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS) UNITS WE\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS) READ-ONLY OPERATIONS SYM -90 -120 -150 PARAMETER |
Similar Part No. - AS8F1M32 |
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