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AS8S512K32 Datasheet(PDF) 5 Page - Austin Semiconductor

Part # AS8S512K32
Description  512K x 32 SRAM SRAM MEMORY ARRAY
Download  14 Pages
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Manufacturer  AUSTIN [Austin Semiconductor]
Direct Link  http://www.austinsemiconductor.com
Logo AUSTIN - Austin Semiconductor

AS8S512K32 Datasheet(HTML) 5 Page - Austin Semiconductor

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SRAM
SRAM
SRAM
SRAM
SRAM
AS8S512K32
& AS8S512K32A
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NOTE 5) (-55oC<T
A < 125
oC and -40oC to +85oC; V
CC = 5V +10%)
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
READ cycle time
tRC
12
15
17
20
25
35
45
55
ns
Address access time
tAA
12
15
17
20
25
35
45
55
ns
Chip select access time
tACS
12
15
17
20
25
35
45
55
ns
Output hold from address change
tOH
22
222222
ns
Chip select to output in Low-Z
tLZCS
22
222222
ns
4,6,7
Chip select to output in High-Z
tHZCS
78
9
1012152020
ns
4,6,7
Output enable access time
tAOE
78
9
1012152020
ns
Output enable to output in Low-Z
tLZOE
00
000000
ns
4,6
Output disable to output in High-Z
tHZOE
12
12
12
15
20
20
ns
4,6
WRITE cycle time
tWC
12
15
17
20
25
35
45
55
ns
Chip select to end of write
tCW
10
12
15
15
17
20
25
25
ns
Address valid to end of write
tAW
10
12
15
15
17
20
25
25
ns
Address setup time
tAS
22222222
ns
Address hold from end of write
tAH
11111111
ns
WRITE pulse width
tWP1
10
12
15
15
17
20
25
25
ns
WRITE pulse width
tWP2
10
12
15
15
17
20
25
25
ns
Data setup time
tDS
8
10121012152020
ns
Data hold time
tDH
00000000
ns
Write disable to output in Low-z
tLZWE
22222222
ns
4,6,7
Write enable to output in High-Z
tHZWE
7
8
9
1113151515
ns
4,6,7
UNITS
-35
-12
-15
-45
-55
WRITE CYCLE
READ CYCLE
DESCRIPTION
-20
-17
-25
SYMBOL
NOTES


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