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AS27C256-90ECAI Datasheet(PDF) 2 Page - Austin Semiconductor |
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AS27C256-90ECAI Datasheet(HTML) 2 Page - Austin Semiconductor |
2 / 13 page UVEPROM UVEPROM UVEPROM UVEPROM UVEPROM AS27C256 AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 Austin Semiconductor, Inc. GENERAL DESCRIPTION The AS27C256 series is a set of 262,144 bit, ultraviolet-light erasable, electrically programmable read-only memories. These devices are fabricated using power-saving CMOS tech- nology for high speed and simple interface with MOS and bipo- lar circuits. All inputs (including program data inputs) can be driven by Series 54 TTL circuits without the use of external pullup resistors. Each output can drive one Series 54 TTL circuit without external resistors. The data outputs are 3-state for connecting multiple devices to a common bus. The AS27C256 is pin-compatible with 28-pin 256K ROMs and EPROMs. It is offered in a 600mil dual-in-line ceramic package (J suffix) and a 450 x 550 mil ceramic LCC (ECA suffix) rated for operation from -55°C to 125°C. Because this EPROM operates from a single 5V supply (in the read mode), it is ideal for use in microprocessor-based sys- tems. One other supply (12.75V) is needed for programming. All programming signals are TTL level. This device is pro- grammable by the AMD FLASHRITE Pulse programming algo- rithm. The FLASHRITE Pulse programming algorithm uses a V PP of 12.75VV and a V CC of 6.25V for a nominal programming time of four seconds. For programming outside the system, existing EPROM programmers can be used. Locations can be programmed singly, in blocks, or at random. FUNCTIONAL BLOCK DIAGRAM* * This symbol is in accordance with ANSI/IEEE std 91-1984 and IEC Publication 617-12. A0 A1 A2 A3 A4 A5 DQ0 A6 DQ1 A7 DQ2 A8 DQ3 A9 DQ4 A10 DQ5 A11 DQ6 A12 DQ7 A13 A14 E\ G\ & 10 [PWR DWN] 9 8 7 6 5 4 3 25 24 21 23 2 26 27 20 22 EN A A A A A A A A 11 12 13 15 16 17 18 19 EPROM 32,768 x 8 0 14 A 0 32,767 |
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