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AS28C010CW-25 Datasheet(PDF) 5 Page - Austin Semiconductor |
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AS28C010CW-25 Datasheet(HTML) 5 Page - Austin Semiconductor |
5 / 14 page EEPROM EEPROM EEPROM EEPROM EEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 Austin Semiconductor, Inc. MODE SELECTION MODE CE\ OE\ WE\ I/O READ VIL VIL VIH DOUT STANDBY VIH X X High-Z WRITE VIL VIH VIL DIN DESELECT VIL VIH VIH High-Z XX VIH --- X VIL X --- DATA POLLING VIL VIL VIH Data Out (I/O7) WRITE INHIBIT Parameter Min. Max. Units Endurance 10,000 Cycles Per Byte Endurance 100,000 Cycles Per Page Data Retention 100 Years ENDURANCE AND DATA RETENTION Symbol Parameter Max. Units tPUR (2) Power-up to Read Operation 100 s tPUW (2) Power-up to Write Operation 5 ms POWER-UP TIMING Input Pulse Levels 0V to 3V Input Rise and Fall Times 10ns Input and Output Timing Levels 1.5V A.C. CONDITIONS OF TEST CAPACITANCE T A=+25 oC, f= 1MHZ, V CC=5V PARAMETER SYMBOL MAX UNITS Test Conditions Input Capacitance CIN (2) 10 pF VIN=0V Input / Output Capactiance CI/O (2) 10 pF VI/O=0V EQUIVALENT A.C. LOAD CURRENT SYMBOL TABLE Notes: (2) This parameter is periodically sampled and not 100% tested. |
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