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BUV22 Datasheet(PDF) 2 Page - Motorola, Inc

Part # BUV22
Description  40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

BUV22 Datasheet(HTML) 2 Page - Motorola, Inc

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BUV22
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS1
Collector–Emitter Sustaining Voltage
(IC = 200 mA, IB = 0, L = 25 mH)
VCEO(sus)
250
Vdc
Collector Cutoff Current at Reverse Bias
(VCE = 300 V, VBE = –1.5 V)
(VCE = 300 V, VBE = –1.5 V, TC = 125_C)
ICEX
3.0
12.0
mAdc
Collector–Emitter Cutoff Current
(VCE = 200 V)
ICEO
3.0
mAdc
Emitter–Base Reverse Voltage
(IE = 50 mA)
VEBO
7
V
Emitter–Cutoff Current
(VEB = 5 V)
IEBO
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
(VCE = 20 V, t = 1 s)
(VCE = 140 V, t = 1 s)
IS/b
12
0.15
Adc
ON CHARACTERISTICS1
DC Current Gain
(IC = 10 A, VCE = 4 V)
(IC = 20 A, VCE = 4 V)
hFE
20
10
60
Collector–Emitter Saturation Voltage
(IC = 10 A, IB = 1 A)
(IC = 20 A, IB = 2.5 A)
VCE(sat)
1.0
1.5
Vdc
Base–Emitter Saturation Voltage
(IC = 40 A, IB = 4 A)
VBE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(VCE = 15 V, IC = 2 A, f = 4 MHz)
fT
8.0
MHz
SWITCHING CHARACTERISTICS (Resistive Load)
Turn–on Time
(IC = 20 A, IB1 = IB2 = 2.5 A,
VCC = 100 V, RC = 5 Ω)
ton
0.8
µs
Storage Time
(IC = 20 A, IB1 = IB2 = 2.5 A,
VCC = 100 V, RC = 5 Ω)
ts
2.0
Fall Time
VCC = 100 V, RC = 5 Ω)
tf
0.35
1Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.


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