4

Surface Mount Zero Bias Schottky Detector Diodes

M/A-COM Products

Rev. V6

MA4E2200 Series

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

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Applications Section

MADS-002200

Frequency (GHz) vs. Output Voltage (V)

0.01

0.1

1

10

0.1

1

10

Frequency (GHz)

-20 dBm SN1

-10 dBm SN1

0 dBm SN1

+10 dBm SN1

MADS-002200

Input Pow er (dBm ) vs. Output Voltage (V)

0.01

0.1

1

10

-20

-15

-10

-5

0

5

10

Input Pow er (dBm )

1 GHz

5 GHz

10 GHz

The MADS-002200 in an SC-79 Package Style was evaluated in a detector circuit in which the

Schottky diode terminates a 50 Ohm transmission line on a duroid substrate. The SC-79 packaged

diode was attached to the terminal of a 3.5mm connector and the output voltage was measured

through a bias tee on a voltmeter. Matching was not attempted.

The voltage peak at 2 GHz is due to a resonance of the SC-79 package inductance with the diode junc-

tion capacitance. This condition results in higher RF voltage across the diode junction.