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MA4P506-30 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MA4P506-30 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 7 page ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Packaged PIN Diodes RoHS Compliant Rev V.9 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Features ♦ High Power ♦ Fast Speed ♦ Voltage Ratings to 1500 Volts ♦ Wide Selection of Carrier Lifetimes ♦ Wide Selection of Capacitances ♦ Assortment of Packages Styles ♦ Available Screened for Military Applications Description and Applications M/A-COM's broad line of packaged PIN diodes encompasses a comprehensive range of electrical characteristics and package outlines. This diverse union of semiconductor technology and chip packaging gives considerable flexibility to the circuit designer. The fast switching series of packaged PIN diodes utilize a thin I-region and silicon oxide or glass passivated chips which provide for low leakage currents and low insertion loss. Using in process control monitors to regulate wafer fabrication parameters these devices achieve consistent performance in control circuit applications. The high voltage product line of packaged PIN diodes employs M/A-COM's unique CERMACHIP ® passivation process which provides for a hard glass encapsulation that hermetically seals the active area of the chip. These packaged CERMACHIP ® PIN diodes are ideally suited for use in high power applications where high RF voltages are present. The diode chips are bonded into sealed ceramic packages that are designed for the most stringent electrical and environmental conditions. A wide choice of packages are available which can be mounted into a variety of microwave and RF circuit media. The Packaged PIN Diodes series are designed to have a high inherent reliability and may be ordered screened to meet many MIL-STD reliability levels. Absolute Maximum Ratings1 1. Operation beyond any one of the above conditions may cause permanent damage to the device. Cathode Heatsink Packages 30,31,32,36,43,94,111,120, 150,255 258,296,1072,1079 Pdiss = T (max Operating)-25°C Thermal Resistance Leaded Packages @+25°C 144, 186, 276,1088 Pdiss = 250mW Surface Mount Package +25°C 1056 Pdiss = 300mW Maximum Power Dissipation Co-Axial Packages Leaded/Surface Mount Packages Threaded Packages Specifications subject to change without prior notification. Unpackaged Die Parameter Absolution Max. Voltage As Specified in Table Operating Temperature - 65°C to +175°C Storage Temperature - 65°C to +200°C Operating and Storage (Case Style 1088) - 65°C to +125°C 31,32,94 36 1056 120,255 276 186 30, 296 1088 1072,1079 150 111 43 258 131,132.134 , 212 Thru Hole 144 |
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