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2SA2166 Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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2SA2166 Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 4 page  2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION DESCRIPTION ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor designed with high collector current, low V CE（sat）. FEATURE ●High collector current I C（MAX）=-500mA ●Low collector to emitter saturation voltage V CE（sat）<-0.4Vmax(IC=-150mA、IB=-15mA） APPLICATION For switching application, small type motor drive application. MAXIMUM RATINGS（Ta=25℃） 記 号 項 目 定 格 値 単 位 V CEO Collector to Emitter voltage -60 V V CBO Collector to Base voltage -60 V V EBO Emitter to Base voltage -5 V I C Collector current -500 mA P C Collector dissipation 200 mW T j Junction temperature 150 ℃ T stg Storage temperature -55～150 ℃ ELECTRICAL CHARACTERISTICS（Ta=25℃） Limits Symbol Parameter Test condition Min Typ Max Unit V （BR）CEO C to E break down voltage IC=-1mA、IB=0 -60 V V （BR）CBO C to B break down voltage IC=-10uA、IE=0 -60 V V （BR）EBO E to B break down voltage IE=-10uA、IC=0 -5 V I CBO Collector cut off current VCB=-50V、IE=0 -100 nA I EBO Emitter cut off current VEB=-3V、IC=0 -100 nA h FE DC forward current gain IC=-150mA、VCE=-10V 100 300 --- V CE（sat） C to E saturation voltage IC=-150mA、IB=-15mA -0.4 V V BE（sat） B to E saturation voltage IC=-150mA、IB=-15mA -1.3 V f T Gain band width product IE=50mA、VCE=-20V、f=100MHz 200 MHz C ob Collector output capacitance VCB=-10V、f=1MHz 8 pF OUTLINE DRAWING Unit：mm 0.5 2.5 0.5 1.5 ① ② ③ Notice: The dimension without tolerance represent central value. TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR EIAJ：SC-59 JEDEC：TO-236 Resemblance MARKING ・ A W Type Name |
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