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MA4AGP907 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

Part # MA4AGP907
Description  AlGaAs Flip Chip PIN Diodes
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MA4AGP907 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

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• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
AlGaAs
Flip Chip PIN Diodes
RoHS Compliant
Rev. V4
MA4AGP907
MA4AGFCP910
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Electrical Specifications @ TAMB = +25°C
Parameter
Symbol
Conditions
Units
MA4AGP907
MA4AGFCP910
Typ.
Max.
Typ.
Max.
Total Capacitance
CT
MA4AGP907 -5V,1MHz
MA4AGFCP910 -10V,1MHz
pF
0.025
0.030
0.018
0.021
Total Capacitance 1
CT
-5V, 10GHz
pF
0.020
——
0.018
0.021
Series Resistance
RS
+10mA, 1MHz
5.2
7.0
——
——
Series Resistance 2
RS
+10mA, 10GHz
4.2
——
5.2
6.0
Forward Voltage
VF
+10mA
V
1.33
1.45
1.33
1.45
Reverse Leakage Current 3
IR
MA4AGP907 VR = -50V
MA4AGFCP910 VR = -75V
μA
——
10
——
10
Switching Speed 4
TRISE
TFALL
10GHz
nS
2
——
2
——
Carrier Lifetime
TL
IF = 10mA / IREV = 6mA
nS
——
——
4
——
Notes:
1) Capacitance is determined by measuring the isolation of a single series diode in a 50Ω transmission
line at 10GHz.
2) Series resistance is determined by measuring the insertion loss of a single series diode in a 50Ω
transmission line at 10GHz.
3) The max rated VR( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is
measured to be <10μA
4) Switching speed is measured between 10% and 90% or 90% to 10% RF voltage for a single series
mounted diode. Driver delay is not included.


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