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INK0010AM1 Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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INK0010AM1 Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 4 page  ＩＮＫ0010AＸ SERIES High speed switching Silicon N-channel MOSFET MAXIMUM RATING（Ｔａ＝２５℃） RATING SYMBOL PARAMETER INK0010AT2 INK0010AU1 INK0010AM1 INK0010AC1 UNIT Ｖ DSS Drain-source voltage 60 V Ｖ GSS Gate-source voltage ±20 V Ｉ D Drain current 100 mA Ｐ Ｄ Total power dissipation （Ta=25℃） 125（※） 150 200 mW Ｔch Channel temperature +125 +150 ℃ Ｔｓｔｇ Range of Storage temperature -55～+125 -55～+150 ℃ ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃） ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. LIMIT SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT V(BR)DSS Drain-source breakdown voltage I D=100μA, V GS=0V 60 - - V IGSS Gate-source leak current V GS=±15V, VDS=0V - - ±1.0 μA IDSS Zero gate voltage drain current V DS=60V ,VGS=0V - - 1.0 μA Vth Gate threshold voltage I D=250μA, V DS= V GS 1.0 - 2.0 V | Yfs | Forward transfer admittance V DS=10V, I D=100mA - 200 - mS I D=100mA, V GS=4.0V - 4.0 - RDS(on) Static drain-source on-state resistance I D=100mA, V GS=10.0V - 3.0 - Ω Ciss Input capacitance V DS=10V, V GS=0V,f=1MHz - 20 - pF Coss Output capacitance V DS=10V, V GS=0V,f=1MHz - 5.0 - pF tON - 27 - tOFF Switching time V DD=5V , I D=10mA V GS=0～5V - 58 - ns Switching time test condition ISAHAYA ELECTRONICS CORPORATION VDD=5V D.U.≦1% Common source Ta=25℃ 90% 10% 90% 10% 0V 5V VDD VDS(ON） ton toff tr tf 5V 0 10μs test circuit input waveform output waveform OUT RL VDD IN 50Ω VDD=5V D.U.≦1% Common source Ta=25℃ 90% 10% 90% 10% 0V 5V VDD VDS(ON） ton toff tr tf 5V 0 10μs test circuit input waveform output waveform OUT RL VDD IN 50Ω OUT RL VDD IN 50Ω |
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