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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

5

HMIC™ Silicon PIN Diode Switches

RoHs Compliant

Rev. V6

MASW-001100-1190

MASW-002100-1191

MASW-003100-1192

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Operation of the MASW Series Switches

Operation of the MASW series of PIN switches is achieved

by simultaneous application of negative DC current to the

low loss switching arm J1, J2, or J3, and positive DC

current to the remaining switching arms as shown in the

bias connection circuits. DC return is achieved via J1. The

control currents should be supplied by constant current

sources. The voltages at these points will not exceed

+1.5 volts (1.2V typical) at currents up to +20mA. In the low

loss state, the series diode must be forward biased and the

shunt diode reverse biased. In the isolated arm, the shunt

diode is forward biased and the series diode is reverse

biased.

Driver Connections

MASW-001100-1190

MASW-002100-1191

MASW-003100-1192

Handling Considerations

Cleanliness:

These chips should be handled in a clean

environment.

Electro-Static Sensitivity:

The MASW series PIN switches

are ESD, Class 1A sensitive (HBM). The proper ESD

handling procedures should be used.

Control Level

(DC Current) at

Condition of

RF Output

J2

J1-J2

-20mA

Low Loss

+20mA

Isolation

Control Level

(DC Current) at

Condition of

RF Output

Condition of

RF Output

J2

J3

J1-J2

J1-J3

-20mA

+20mA

Low Loss

Isolation

+20mA

-20mA

Isolation

Low Loss

Control Level

(DC Current) at

Cond. of

RF Output

Cond. of

RF Output

Cond. of RF

Output

J2

J3

J4

J1-J2

J1-J3

J1-J4

-20mA

+20mA

+20mA

Low Loss

Isolation

Isolation

+20mA

-20mA

+20mA

Isolation

Low Loss

Isolation

+20mA

+20mA

-20mA

Isolation

Isolation

Low Loss

MASW-001100-1190 and Bias Connections

1

20nH

20nH

20pF

20pF

20pF

20pF

100

Ω

J2 BIAS

RF OUTPUT

J2

J1

RF INPUT

Switch

Chip

MASW-002100-1191 and Bias Connections

1

J1 RF INPUT

J2 BIAS

J2

RF OUTPUT

J3 BIAS

J3

RF OUTPUT

Switch

Chip

20pF

20pF

20pF

20pF

20pF

20pF

20nH

20nH

20nH

100

Ω

MASW-003100-1192 and Bias Connections

1

J2 BIAS

J2

RF OUTPUT

J4

RF OUTPUT

J1 RF INPUT

J4 BIAS

J3 BIAS

J3

RF OUTPUT

20pF

20pF

20pF

20pF

20pF

20pF

20pF

20pF

20nH

20nH

20nH

20nH

100

Ω

Notes:

1. RLC values are for an operation frequency of 2-18GHz and

bias current of ± 20mA per diode.