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MASW-005100-1194 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MASW-005100-1194 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 7 page V3 MASW-005100-1194 HMIC™ SP5T Silicon PIN Diode Switch ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 Features ♦ Ultra Broad Bandwidth: 50MHz to 26GHz ♦ 0.9 Insertion Loss , 38dB Isolation at 20GHz ♦ 50nS Switching Speed ♦ Reliable, Fully Monolithic, Glass Encapsulated Construction ♦ +33dBm Power Handling ♦ RoHS Compliant Description The MASW-005100-1194 is a SP4T, series-shunt, broad band, PIN diode, switch made with M/A-COM Tech’s unique HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows for the incorporation of silicon pedestals that form the series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeter- wave frequencies. Applications This high performance switch is suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50nS switching speeds are achieved. Absolute Maximum Ratings TAMB = +25°C ( Unless Otherwise Specified ) Notes: Exceeding these limits may cause permanent damage. Maximum operating conditions for the combination of RF Power, D.C. Bias, and temperature: +33dBm, @ 15mA/Diode @ +85°C Parameter Value Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C RF C.W. Incident Power (± 20mA) +33dBm Bias Current ( Forward ) ± 20mA Applied Voltage ( Reverse ) -25 Volts |
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