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MA4E2508L-1112 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MA4E2508L-1112 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 4 page 2 SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair M/A-COM Products Rev. V3 MA4E2508 Series ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Electrical Specifications @ 25°C 1,2 Model Number Type Recommended Freq. Range Vf @ 1 mA (mV) Ct @ 0 V (pF) Rt Slope Resistance (Vf1 - Vf2) / (10.5 mA - 9.5 mA) (Ω) MA4E2508L Low Barrier DC - 18 GHz 330 Max 300 Typ 0.24 Max 0.18 Typ 16 Typical 20 Max MA4E2508M Medium Barrier DC - 18 GHz 470 Max 420 Typ 0.24 Max 0.18 Typ 12 Typical 18 Max MA4E2508H High Barrier DC - 18 GHz 700 Max 650 Typ 0.24 Max 0.18 Typ 6 Typical 8 Max 1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the ohmic resistance. 2. Max forward voltage difference ΔVf @ 1mA: 10mV Applications The MA4E2508 Family of Surmount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applica- tions such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with sol- der. Handling All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individ- ual components. The top surface of the die has a protective polyimide coating to minimize the damage. The rugged construction of these Surmount devices allows the use of standard handling and die attach techniques. It is important to note that industry stan- dard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions. Bulk handling should insure that abrasion and mechanical shock are minimized. Die Bonding Die attach for these devices is made simple through the use of surface mount die attach technology. Mounting pads are conveniently located on the bottom surface of these devices, and are opposite the active junction. The devices are well suited for higher tem- perature solder attachment onto hard substrates. 80Au/20Sn and Sn63/Pb37 solders are acceptable for usage. 1. Exceeding any of these values may cause permanent damage. 2. Human Body Model Die Bonding For hard substrates, we recommend utilizing a vac- uum tip and force of 60 to 100 grams applied uni- formly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. When soldering to soft substrates, it is recommended to use a lead-tin inter- face at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the cir- cuit board mounting pads. Reflow the solder paste by applying equal heat to the circuit at both die-mounting pads. The solder joint must not be made one at a time, creating un-equal heat flow and thermal stress. Solder reflow should not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads can be visually inspected through the die after die attach is completed. Parameter Absolute Maximum Operating Temperature -40°C to +125°C Storage Temperature -40°C to +150°C Junction Temperature +175°C Forward Current 20 mA Reverse Voltage 5 V RF C.W. Incident Power +20 dBm RF & DC Dissipated Power 50 mW Electrostatic Discharge ( ESD ) Classification 2 Class 0 Absolute Maximum Ratings @ 25°C (unless otherwise noted) 1 |
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