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MA4L032 Datasheet(PDF) 5 Page - M/A-COM Technology Solutions, Inc. |
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MA4L032 Datasheet(HTML) 5 Page - M/A-COM Technology Solutions, Inc. |
5 / 6 page MA4L Series 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Silicon PIN Limiter Diodes V13 Notes for Specification and Nominal High Signal Performance Tables: 1) Maximum Series Resistance: RS, is measured at 500 MHz in the ODS-30 package and is equivalent to the total diode resistance: RS = Rj (Junction Resistance) + RO (Ohmic Resistance) 2) Nominal C.W. Thermal Resistance: ӨTH is measured in a ceramic pill package, ODS-30, mounted to a metal (infinite) heatsink. Chip only thermal resistance values are approximately 2°C/W lower than the ODS-30 listed package values in the specifications table. 3) Maximum High Signal Performance: Measured using a single shunt diode (die) attached directly to the gold plated RF housing ground with 2 mil thick conductive silver epoxy in a 50Ω, SMA, connectorized test fixture. Chip anode contact is thermo-compression wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick Rogers 5880 Duroid microstrip trace. A shunt coil provides the D.C. return. Test frequency = 9.4 GHz, RF pulse width = 1.0 µS, Duty Cycle = 0.001%. 4) Maximum C.W. Incident Power: Measured in a 50Ω, SMA, connectorized housing @ 4GHz utilizing a TWT amplifier and the same single diode assembly configuration as stated in Note 3 above. Die Handling and Mounting Information Handling: All semiconductor chips should be handled with care in order to avoid damage or contamination from perspiration, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick up tools is strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are minimized. Die Attach: The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1.0µM. Die can be mounted with a gold-tin, eutectic solder perform or conductive silver epoxy. The metal RF and D.C. ground plane mounting surface must be free of contamination and should have a surface flatness or < ± 0.002”. • Eutectic Die Attachment Using Hot Gas Die Bonder: An 80/20, gold / tin eutectic solder perform is recommended with a work surface temperature of 255°C and a tool tip temperature of 220°C. When the hot gas is applied, the temperature at the tool tip should be approximately 290°C. The chip should not be exposed to a temperatures in excess of 320°C for more than 10 seconds. • Eutectic Die Attachment Using Reflow Oven: Refer to Application Note M538, “Surface Mounting Instructions”. • Epoxy Die Attachment: A thin, controlled amount of electrically conductive silver epoxy should be applied, approximately 1-2 mils thick to minimize ohmic and thermal resistances. A small epoxy fillet should be visible around the outer perimeter of the chip after placement to ensure full area coverage. Cure the conductive silver epoxy per the manufacturer’s schedule, typically 150˚C for 1 hour. Wire Bonding: The chip’s anode metallization stack is comprised of Ti/Pt/Au with a final gold thickness of 1.0µM. Thermo-compression wedge bonding using a .7 to 1 mil diameter gold wire is recommended, depending on the contact diameter. The heat stage temperature should be set to approximately 200°C with a bonding tip temperature of 125˚C and a force of 18 to 40 grams. Use of ultrasonic energy is not advised but if necessary it should be adjusted to the minimum required to achieve a good bond. Excessive energy or force applied to the top contact will cause the metallization to dislodge and lift off. Automatic ball bonding may also be used. See Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” for more detailed handling and assembly information. |
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