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SC3010S Datasheet(PDF) 2 Page - Silan Microelectronics Joint-stock |
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SC3010S Datasheet(HTML) 2 Page - Silan Microelectronics Joint-stock |
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2 / 14 page  SC3010 HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:2.2 2005.12.15 Http: www.silan.com.cn Page 2 of 15 ABSOLUTE MAXIMUM RATING (Tamb=25°C, unless otherwise specified) Characteristics Symbol Test conditions Value Unit Supply Voltage* VDD VSS -0.3 ~ 5.5 V Input Voltage* VIN VDD=3 V -0.5 ~ VDD+0.5 V Output Voltage* VOUT VDD=3 V -0.5 ~ VDD+0.5 V Operating Temperature TOPR VDD=3 V -20~85 °C NOTE: * = with reference to Vss. ELECTRICAL CHARACTERISTICS (Tamb=25°C, unless otherwise specified) Characteristics Symbol Test conditions Min Typ Max Unit Supply Voltage VDD Freq=455KHz 2.0 3.0 5.5 V Stand-By Current IDD VDD =3V (Output no load) 0 10 µA Input Current(KI0~KI7,C0~C3) IIN VI=0V T1=0 T2=0 SMS=0 15 600 µA High Level Input Voltage (KI0~KI7,C0~C3,SMS,T1,T2) VIH VDD =3V, (KI0~KI7 And C0~C3 Connected To VDD) 0.7VDD V Low Level Input Voltage (KI0~KI7,C0~C3,SMS,T1,T2) VIL VDD=3V ,( T1,T2,OSC,SMS Connected To VSS) 0.3VDD V VI=3V VDD=3V T1=T2=High 0 1.0 Input Current Leakage (KI0~KI7,C0~C3) ILEAK1 VI=0V VDD=3V T1=T2=High 0 1.0 µA ILEAK2 VI=0V VDD=3V T1=T2=High 0 1.0 Input Current Leakage (OSC) ILEAK3 VI=3V VDD=3V T1=T2=High 4.5 15 30 µA VI=3V VDD=3V T=25 °C 0 1.0 Input Leakage Current (SMS,T1,T2) ILEAK4 VI=0V VDD=3V T=25 °C 0 1.0 µA High Level Output Voltage (Dout, MDOUT) VOH VDD=3V IOH=0.4mA VDD- 0.3 Low Level Output Voltage (Dout, MDOUT) VOL VDD=3V IOH=0.6mA 0.35 V Vo=3V VDD=3V T=25 °C 10 Output Current Leakage (Dout, MDOUT) ILEAK5 Vo=0V VDD=3V T=25 °C 1 µA Low Level Output Voltage (KO0~KO7) VOL VDD=3V IOL=0.3mA 0.8 V Vo=3V VDD=3V T=25 °C 0 1 Output Current Leakage (KO0~KO7) ILEAK6 Vo=3V VDD=3V T=- 25~85 °C 3 10 µA Drive Current (Dout, MDout) ID VDD=3V Vo=1.5V 1.5 2 mA Operational Frequency Fosc1 VDD=3V 400 600 KHz Free-Running Frequency Fosc2 VDD=3V 50 100 KHz |
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