FDI040N06 datasheet(3/8 Pages) FAIRCHILD

Part #	FDI040N06

Description	N-Channel PowerTrench짰 MOSFET 60V, 168A, 4.0mW

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDI040N06 Rev. A

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3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0.01

0.1

1

0.1

1

10

100

1000

*Notes:

1. 250

µµµµs Pulse Test

2. TC = 25

o

C

VGS = 15.0V

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

VDS,Drain-Source Voltage[V]

6

2

3

4

5

6

7

8

1

10

100

1000

-55

o

C

175

o

C

*Notes:

1. VDS = 10V

2. 250

µµµµs Pulse Test

25

o

C

VGS,Gate-Source Voltage[V]

0.2

0.4

0.6

0.8

1.0

1.2

1

10

100

1000

*Notes:

1. V

GS = 0V

2. 250

µµµµs Pulse Test

175

o

C

V

SD, Body Diode Forward Voltage [V]

25

o

C

0

60

120

180

240

300

360

2.5

3.0

3.5

4.0

*Note: TC = 25

o

C

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.1

1

10

100

1000

10000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

30

0

20

40

60

80

100

120

0

2

4

6

8

10

*Note: ID = 75A

VDS = 12V

VDS = 30V

VDS = 48V

Qg, Total Gate Charge [nC]

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