ST3414 datasheet(3/6 Pages) STANSON

Part #	ST3414

Description	N Channel Enhancement Mode MOSFET

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Manufacturer	STANSON [Stanson Technology]

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ST3414

N Channel Enhancement Mode MOSFET

4.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST3414 2006. V1

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

20

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250uA

0.40

1.0

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±

100 nA

VDS=20V,VGS=0V

1

Zero Gate Voltage Drain

Current

IDSS

VDS=20V,VGS=0V

TJ=55℃

5

uA

On-State Drain Current

ID(on)

VDS≧5V,VGS=4.5V

6

A

Drain-source On-Resistance

RDS(on)

VGS=4.5V,ID=4.2A

VGS=2.5V,ID=3.4A

VGS=1.8V,ID=2.8A

0.040

0.055

0.075

Ω

Forward Transconductance

gfs

VDS=5V,ID=3.6V

10

S

Diode Forward Voltage

VSD

IS=1.6A,VGS=0V

0.8

1.2

V

Dynamic

Total Gate Charge

Qg

4.8

8

Gate-Source Charge

Qgs

1.0

Gate-Drain Charge

Qgd

VDS=10V

VGS=4.5V

ID=2.8A

1.0

nC

Input Capacitance

Ciss

485

Output Capacitance

Coss

85

Reverse Transfer

Capacitance

Crss

VDS=6V

VGS=0V

f=1MHz

40

pF

8

14

Turn-On Time

td(on)

tr

12

18

30

35

Turn-Off Time

td(off)

tf

VDD=6V

RL=6Ω

ID=1.0A

VGEN=4.5V

RG=6Ω

12

16

nS

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