STN4920S8TG datasheet(3/7 Pages) STANSON

Part #	STN4920S8TG

Description	Dual N Channel Enhancement Mode MOSFET

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Manufacturer	STANSON [Stanson Technology]

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STN4920

Dual N Channel Enhancement Mode MOSFET

7.2A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4920 2007. V1

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=250uA

30

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250 uA

1.0

3.0

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±

100

nA

VDS=30V,VGS=0V

1

Zero Gate Voltage Drain

Current

IDSS

TJ=55℃

VDS=30V,VGS=0V

5

uA

On-State Drain Current

ID(on)

VDS≥5V,VGS=4.5V

20

A

Drain-source On-Resistance

RDS(on)

VGS=10V, ID=7.2A

VGS=4.5V, ID=6.0A

0.022

0.030

0.028

0.036

Ω

Forward Tran Conductance

gfs

VDS=15.0V,ID=6.2A

13

S

Diode Forward Voltage

VSD

IS=2.3A,VGS=0V

0.8

1.2

V

Dynamic

Total Gate Charge

Qg

30

Gate-Source Charge

Qgs

7.5

Gate-Drain Charge

Qgd

VDS=15V,VGS=10V

ID=7.2A

3.5

nC

Input Capacitance

Ciss

450

Output Capacitance

Coss

240

Reverse TransferCapacitance

Crss

VDS=15.0V,VGS=0V

f=1MHz

38

pF

12

20

Turn-On Time

td(on)

tr

10

20

60

90

Turn-Off Time

td(off)

tf

VDD=15V,RL=15Ω

ID=1A,VGEN=10V

RG=6Ω

15

30

nS

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