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STN8205DST6RG Datasheet(PDF) 1 Page - Stanson Technology |
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STN8205DST6RG Datasheet(HTML) 1 Page - Stanson Technology |
1 / 6 page STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205D 2007. V1 DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSOP-6 S:Subcontractor Y: Year A: Week Code ORDERING INFORMATION Part Number Package Part Marking STN8205DST6RG TSOP-6 SYA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST8205DST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free FEATURE 20V/4.0A, R DS(ON) = 30m-ohm@VGS =4.5V 20V/3.4A, RDS(ON) =42m-ohm@VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSOP-6 package design STN8205 SYA G1 D G2 S1 D S2 |
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