STN8205D

Dual N Channel Enhancement Mode MOSFET

5.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STN8205D 2007. V1

DESCRIPTION

STN8205D is the dual N-Channel enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application, such as notebook computer power

management and other battery powered circuits, where high-side switching is required.

PIN CONFIGURATION

TSOP-6

S：Subcontractor

Y: Year

A: Week Code

ORDERING INFORMATION

Part Number

Package

Part Marking

STN8205DST6RG

TSOP-6

SYA

※

Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)

※

ST8205DST6RG

ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free

FEATURE

20V/4.0A, R

DS(ON)

Super high density cell design for extremely

Exceptional low on-resistance and maximum

DC current capability

TSOP-6 package design

STN8205

SYA

G1 D G2

S1

D

S2