FDMS6681Z datasheet(3/7 Pages) FAIRCHILD

Part #	FDMS6681Z

Description	P-Channel PowerTrench짰MOSFET -30 V, -49 A, 3.2 m��

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDMS6681Z Rev.C4

Typical Characteristics T

J = 25 °C unless otherwise noted

Figure 1.

0123

0

15

30

45

60

75

90

V

GS = -3 V

V

GS = -3.5 V

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 s

DUTY CYCLE = 0.5% MAX

V

GS = -4 V

V

GS = -10V

V

GS = -4.5 V

On Region Characteristics

Figure 2.

0

15

304560

7590

0

1

2

3

4

5

V

GS = -4.5 V

V

GS = -3.5 V

PULSE DURATION = 80 s

DUTY CYCLE = 0.5%MAX

-ID, DRAIN CURRENT (A)

V

GS = -4 V

V

GS = -3 V

V

GS =-10 V

Normalized On-Resistance

vs Drain Current and Gate Voltage

Figure 3. Normalized On Resistance

-75

-50

-25

0

25

50

75

100

125

150

0.6

0.8

1.0

1.2

1.4

1.6

ID = -22.1 A

VGS = -10 V

TJ, JUNCTION TEMPERATURE (

oC)

vs Junction Temperature

Figure 4.

246

8

10

0

3

6

9

12

TJ = 125 oC

ID = -22.1 A

TJ = 25 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 s

DUTY CYCLE = 0.5% MAX

On-Resistance vs Gate to

Source Voltage

Figure 5. Transfer Characteristics

01

234

0

15

30

45

60

75

90

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 150 oC

VDS = -5 V

PULSE DURATION = 80 s

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

Figure 6.

0

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs Source Current

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